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Photoluminescence enhancement by excimer laser irradiation in silicon oxide films prepared by pulsed laser ablation
https://doi.org/10.24517/00007685
https://doi.org/10.24517/00007685ead4afc8-8adb-4774-b46d-882953da25e1
名前 / ファイル | ライセンス | アクション |
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TE-PR-MORIMOTO-S-708.pdf (204.8 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-10-03 | |||||
タイトル | ||||||
タイトル | Photoluminescence enhancement by excimer laser irradiation in silicon oxide films prepared by pulsed laser ablation | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
ID登録 | ||||||
ID登録 | 10.24517/00007685 | |||||
ID登録タイプ | JaLC | |||||
著者 |
Morimoto, Akiharu
× Morimoto, Akiharu× Takizawa, Hidetoshi× Yonezawa, Yasuto× Kumeda, Minoru× Shimizu, Tatsuo |
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著者別表示 |
森本, 章治
× 森本, 章治× 久米田, 稔× 清水, 立生 |
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提供者所属 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報学系 / 金沢大学工学部 | |||||
書誌情報 |
Journal of Non-Crystalline Solids 巻 227-230, 号 PART1, p. 493-497, 発行日 1998-05-01 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0022-3093 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/s0022-3093(98)00096-9 | |||||
出版者 | ||||||
出版者 | Elsevier | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Silicon oxide films were prepared at room temperature by pulsed laser ablation using an ArF or KrF excimer laser in a gas mixture of He and O2. The effect of an ArF excimer laser irradiation on the deposited film was investigated. As-deposited transparent films containing Si crystallites with sizes greater than 10 nm show photoluminescence. However, after laser irradiation with 1000 shots, the photoluminescence (PL) intensity was increased by two orders of magnitude. The PL spectrum is centered around 570 nm (2.2 eV). The origin of the large PL enhancement is discussed | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa |