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Polarization-induced photovoltaic effects in Nd-doped BiFeO 3 ferroelectric thin films
https://doi.org/10.24517/00008867
https://doi.org/10.24517/000088676e67eb93-9ef1-47dc-b6d6-490f9422d88f
名前 / ファイル | ライセンス | アクション |
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TE-PR-MORIMOTO-A-09LE10.pdf (178.1 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-10-03 | |||||
タイトル | ||||||
タイトル | Polarization-induced photovoltaic effects in Nd-doped BiFeO 3 ferroelectric thin films | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
ID登録 | ||||||
ID登録 | 10.24517/00008867 | |||||
ID登録タイプ | JaLC | |||||
著者 |
Ukai, Yohei
× Ukai, Yohei× Yamazaki, Shuhei× Kawae, Takeshi× Morimoto, Akiharu |
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著者別表示 |
川江, 健
× 川江, 健× 森本, 章治 |
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提供者所属 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系 | |||||
書誌情報 |
Japanese Journal of Applied Physics 巻 51, 号 9 PART 2, p. 09LE10, 発行日 2012-09-01 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0021-4922 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA12295836 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1143/JJAP.51.09LE10 | |||||
出版者 | ||||||
出版者 | 応用物理学会 = Japan Society of Applied Physics | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | BiFeO 3 (BNF) thin films were fabricated on SrRuO 3 (SRO)-coated (100) Nb-doped SrTiO 3 subtrates by pulsed laser deposition, and nondoped BiFeO 3 (BFO) thin films were also fabricated similarly for comparison. Then, Nd-doping effects on ferroelectric and photovoltaic properties were evaluated. Polarization-induced photovoltaic effects were observed in both the BFO and BNF solar cell structures with top and bottom electrodes under intense laser illumination. Using Au top electrodes, enhanced photovoltaic properties were observed in the BNF cell compared with the BFO cell. To improve the photovoltaic properties of the BNF cell, instead of the Au top electrodes, In-Sn-O (ITO) top electrodes were employed for the BNF cell. As a result, the photovoltaic properties were found to be markedly improved, resulting in an open circuit voltage of 0.81 V and a short circuit current density of 12.1 mA/cm2. © 2012 The Japan Society of Applied Physics. | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa |