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{"_buckets": {"deposit": "b781627d-becc-4f6c-b6c2-e89480fc658a"}, "_deposit": {"created_by": 3, "id": "9434", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "9434"}, "status": "published"}, "_oai": {"id": "oai:kanazawa-u.repo.nii.ac.jp:00009434", "sets": ["4187"]}, "author_link": ["13581", "2109", "305", "13582", "2051", "80022", "13580"], "item_4_biblio_info_8": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2015-10-05", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "7289585", "bibliographicPageEnd": "102", "bibliographicPageStart": "99", "bibliographic_titles": [{"bibliographic_title": "2015 International Conference on Telematics and Future Generation Networks, TAFGEN 2015"}]}]}, "item_4_creator_33": {"attribute_name": "著者別表示", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "飯山, 宏一"}], "nameIdentifiers": [{"nameIdentifier": "2109", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "90202837", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://kaken.nii.ac.jp/ja/search/?qm=90202837"}]}, {"creatorNames": [{"creatorName": "丸山, 武男"}], "nameIdentifiers": [{"nameIdentifier": "2051", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "60345379", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://kaken.nii.ac.jp/ja/search/?qm=60345379"}]}]}, "item_4_description_21": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Silicon avalanche photodiode (APD) was fabricated by standard 0.18 μm CMOS process. The current-voltage characteristic and frequency response was measured for the APD with and without guard ring. With the guard ring around the perimeter of the diode junction, it shows a better performance for the maximum bandwidth but in contrast lower in responsivity. To enhance the bandwidth, the detection area and the PAD size for RF probing are optimized to 10 × 10 μm2 and 30 × 30 μm2, respectively, to decrease the device capacitance, the spacing of interdigital electrode is narrowed to 0.84 μm to decrease carrier transit time, and by cancelling the carriers photo-generated in the deep layer and the substrate because the carriers are slow diffusion carriers. As a result, the maximum bandwidth of 8 GHz was achieved along with a gain-bandwidth product of 280 GHz. © 2015 IEEE.", "subitem_description_type": "Abstract"}]}, "item_4_identifier_registration": {"attribute_name": "ID登録", "attribute_value_mlt": [{"subitem_identifier_reg_text": "10.24517/00009421", "subitem_identifier_reg_type": "JaLC"}]}, "item_4_publisher_17": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Institute of Electrical and Electronics Engineers Inc."}]}, "item_4_relation_10": {"attribute_name": "ISBN", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "978-147997315-6", "subitem_relation_type_select": "ISBN"}}]}, "item_4_relation_12": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1109/TAFGEN.2015.7289585", "subitem_relation_type_select": "DOI"}}]}, "item_4_version_type_25": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Zul, Atfyi Fauzan M. N."}], "nameIdentifiers": [{"nameIdentifier": "13580", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Iiyama, Koichi"}], "nameIdentifiers": [{"nameIdentifier": "305", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "90202837", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://kaken.nii.ac.jp/ja/search/?qm=90202837"}, {"nameIdentifier": "90202837", "nameIdentifierScheme": "金沢大学研究者情報", "nameIdentifierURI": "http://ridb.kanazawa-u.ac.jp/public/detail.php?kaken=90202837"}, {"nameIdentifier": "90202837", "nameIdentifierScheme": "研究者番号", "nameIdentifierURI": "https://nrid.nii.ac.jp/nrid/1000090202837"}]}, {"creatorNames": [{"creatorName": "Gyobu, Ryoichi"}], "nameIdentifiers": [{"nameIdentifier": "13581", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Hishiki, Takuya"}], "nameIdentifiers": [{"nameIdentifier": "13582", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Maruyama, Takeo"}], "nameIdentifiers": [{"nameIdentifier": "80022", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "60345379", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://kaken.nii.ac.jp/ja/search/?qm=60345379"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-10-03"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "TE-PR-IIYAMA-K-99.pdf", "filesize": [{"value": "502.3 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_11", "mimetype": "application/pdf", "size": 502300.0, "url": {"label": "TE-PR-IIYAMA-K-99.pdf", "url": "https://kanazawa-u.repo.nii.ac.jp/record/9434/files/TE-PR-IIYAMA-K-99.pdf"}, "version_id": "25c9bf59-6a12-4a86-957b-5b6ee29869a1"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "Avalanche photodiode", "subitem_subject_scheme": "Other"}, {"subitem_subject": "CMOS", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Photodiode", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Silicon", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Optimizing silicon avalanche photodiode fabricated by standard CMOS process for 8 GHz operation", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Optimizing silicon avalanche photodiode fabricated by standard CMOS process for 8 GHz operation"}]}, "item_type_id": "4", "owner": "3", "path": ["4187"], "permalink_uri": "https://doi.org/10.24517/00009421", "pubdate": {"attribute_name": "公開日", "attribute_value": "2017-10-03"}, "publish_date": "2017-10-03", "publish_status": "0", "recid": "9434", "relation": {}, "relation_version_is_last": true, "title": ["Optimizing silicon avalanche photodiode fabricated by standard CMOS process for 8 GHz operation"], "weko_shared_id": 3}
Optimizing silicon avalanche photodiode fabricated by standard CMOS process for 8 GHz operation
https://doi.org/10.24517/00009421
https://doi.org/10.24517/00009421f78eab05-304d-4950-b58b-ec83b6bc068f
名前 / ファイル | ライセンス | アクション |
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TE-PR-IIYAMA-K-99.pdf (502.3 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-10-03 | |||||
タイトル | ||||||
タイトル | Optimizing silicon avalanche photodiode fabricated by standard CMOS process for 8 GHz operation | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
ID登録 | ||||||
ID登録 | 10.24517/00009421 | |||||
ID登録タイプ | JaLC | |||||
著者 |
Zul, Atfyi Fauzan M. N.
× Zul, Atfyi Fauzan M. N.× Iiyama, Koichi× Gyobu, Ryoichi× Hishiki, Takuya× Maruyama, Takeo |
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著者別表示 |
飯山, 宏一
× 飯山, 宏一× 丸山, 武男 |
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書誌情報 |
2015 International Conference on Telematics and Future Generation Networks, TAFGEN 2015 号 7289585, p. 99-102, 発行日 2015-10-05 |
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ISBN | ||||||
識別子タイプ | ISBN | |||||
関連識別子 | 978-147997315-6 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1109/TAFGEN.2015.7289585 | |||||
出版者 | ||||||
出版者 | Institute of Electrical and Electronics Engineers Inc. | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Silicon avalanche photodiode (APD) was fabricated by standard 0.18 μm CMOS process. The current-voltage characteristic and frequency response was measured for the APD with and without guard ring. With the guard ring around the perimeter of the diode junction, it shows a better performance for the maximum bandwidth but in contrast lower in responsivity. To enhance the bandwidth, the detection area and the PAD size for RF probing are optimized to 10 × 10 μm2 and 30 × 30 μm2, respectively, to decrease the device capacitance, the spacing of interdigital electrode is narrowed to 0.84 μm to decrease carrier transit time, and by cancelling the carriers photo-generated in the deep layer and the substrate because the carriers are slow diffusion carriers. As a result, the maximum bandwidth of 8 GHz was achieved along with a gain-bandwidth product of 280 GHz. © 2015 IEEE. | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa |