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Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits
http://hdl.handle.net/2297/19580
http://hdl.handle.net/2297/195807fd8446f-320a-4bac-9f54-4807ffee3afe
名前 / ファイル | ライセンス | アクション |
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TE-PR-MARUYAMA-T-12564.pdf (445.0 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-10-03 | |||||
タイトル | ||||||
タイトル | Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Okumura, Tadashi
× Okumura, Tadashi× Kurokawa, Munetaka× Shirao, Mizuki× Kondo, Daisuke× Ito, Hitomi× Nishiyama, Nobuhiko× Maruyama, Takeo× Arai, Shigehisa |
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提供者所属 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 金沢大学理工研究域電子情報学系 | |||||
書誌情報 |
Optics Express 巻 17, 号 15, p. 12564-12570, 発行日 2009-07-20 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1094-4087 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1364/OE.17.012564 | |||||
出版者 | ||||||
出版者 | Optical Society of America | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | A room-temperature pulsed operation was demonstrated using lateral current injection-type lasers composed of a 400-nm-thick GaInAsP core layer with compressively strained 5 quantum wells. A threshold current of 105 mA and corresponding density of 1.3 kA/cm2 (260 A/cm2 per well) were obtained with the stripe width of 5.4 μm and the cavity length of 1.47 mm. A fundamental transverse mode operation was obtained with the narrower stripe device of 2.0 μm and the cavity length of 805 μm, while the threshold current and corresponding density were 49 mA and 3.0 kA/cm 2, respectively. © 2009 Optical Society of America. | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa |