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Development of a High-Intensity UV Exposure Apparatus under a High-Pressure CO2 Gas Atmosphere to Manufacture Large-Area Porous Ultralow-k Polyimide Substrates for Flexible Print Circuits
https://doi.org/10.24517/00051417
https://doi.org/10.24517/000514178db75b92-abf5-4aac-ad1f-3a7d7b7a994b
名前 / ファイル | ライセンス | アクション |
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TE-PR-TAKI-K-747.pdf (1.6 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2018-07-02 | |||||
タイトル | ||||||
タイトル | Development of a High-Intensity UV Exposure Apparatus under a High-Pressure CO2 Gas Atmosphere to Manufacture Large-Area Porous Ultralow-k Polyimide Substrates for Flexible Print Circuits | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
ID登録 | ||||||
ID登録 | 10.24517/00051417 | |||||
ID登録タイプ | JaLC | |||||
著者 |
Taki, Kentaro
× Taki, Kentaro× Ito, Hiroshi |
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著者別表示 |
瀧, 健太郎
× 瀧, 健太郎 |
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提供者所属 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 金沢大学理工研究域機械工学系 | |||||
書誌情報 |
Journal of Photopolymer Science and Technology en : フォトポリマー懇話会誌 巻 28, 号 6, p. 747-754, 発行日 2015 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0914-9244 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11576862 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.2494/photopolymer.28.747 | |||||
出版者 | ||||||
出版者 | Technical Association of Photopolymers = フォトポリマー懇話会 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Ultralow-k (dielectric constant) films are promising substrates for next-generation flexible print circuits. Introducing numerous pores into the film can effectively reduce the substrate's dielectric constant because the relative dielectric constant of air is smaller than that of any polymer substrate. We recently developed a short-cycle time process employing high-pressure CO2 and the CO2-tertiaryamine zwitterions in polyimide precursor solutions to create 1-3 μm pores of >70% porosity. However, the film size was limited to 30 × 30 mm2. A larger film (70 × 150 mm2) was required to measure the signal attenuation of an electrical circuit on a porous PI film as a next-generation flexible cable. In this paper, the developed process was scaled up to obtain 10-fold-larger ultralow-k films of porous polyimide. The process involved a high-intensity UV lamp, thick-quartz window and hydraulically movable sealing plate and produces 70 × 150 mm2 films, which was a suitable size for high-speed data communication transmission tests. The preliminary results of building up a printed circuit on the porous substrate and signal attenuation measurements at 20 GHz demonstrated that the low-k porous PI substrate reduced the signal attenuation compared to a non-porous substrate with the same cross-sectional line area. | |||||
権利 | ||||||
権利情報 | Copyright © Technical Association of Photopolymers フォトポリマー懇話会 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
関連URI | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://www.jstage.jst.go.jp/browse/photopolymer/-char/en | |||||
関連名称 | https://www.jstage.jst.go.jp/browse/photopolymer/-char/en | |||||
関連URI | ||||||
識別子タイプ | URI | |||||
関連識別子 | http://www.tapj.jp/ | |||||
関連名称 | http://www.tapj.jp/ |