WEKO3
インデックスリンク
アイテム
{"_buckets": {"deposit": "db773449-af11-4fdd-8787-96d7faad4a0b"}, "_deposit": {"created_by": 18, "id": "57272", "owners": [18], "pid": {"revision_id": 0, "type": "depid", "value": "57272"}, "status": "published"}, "_oai": {"id": "oai:kanazawa-u.repo.nii.ac.jp:00057272", "sets": ["2832"]}, "author_link": ["11298"], "item_9_biblio_info_8": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2003-09-16", "bibliographicIssueDateType": "Issued"}, "bibliographicPageStart": "2p.", "bibliographicVolumeNumber": "1999 – 2001", "bibliographic_titles": [{"bibliographic_title": "平成13(2001)年度 科学研究費補助金 基盤研究(B) 研究概要"}, {"bibliographic_title": "2001 Research Project Summary", "bibliographic_titleLang": "en"}]}]}, "item_9_creator_33": {"attribute_name": "著者別表示", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Hata, Tomonobu"}], "nameIdentifiers": [{"nameIdentifier": "11298", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "50019767", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://kaken.nii.ac.jp/ja/search/?qm=50019767"}, {"nameIdentifier": "50019767", "nameIdentifierScheme": "研究者番号", "nameIdentifierURI": "https://nrid.nii.ac.jp/nrid/1000050019767"}]}]}, "item_9_description_21": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "制限反応スパッタリングと名付けた新しいスパッタリング法を研究開発した.この技法を用いて,次世代MOSFET用ゲート絶縁膜としてZrO2誘電体膜を形成した.Si基板表面の酸化が抑制され20を越える高い比誘電率が得られた.酸化物ターゲットを用いた通常のスパッタリング法では酸素イオンや活性種が励起されSi基板は直ちに酸化してしまうが,この堆積法では,そのような酸化種が発生しないので,Si基板とその上の堆積膜の界面は急峻に形成できる.", "subitem_description_type": "Abstract"}, {"subitem_description": "A new sputtering film deposition method, named Limited Reaction Sputtering Technique, was developed and investigated. Using this technique, ZrO2 dielectric films were synthsized for gate materials of next generation MOSFETs. The Si substrate surface oxidation was suppressed consequently a high specific dielectric constant as high as over 20 was obtained. On conventional sputtering technique using oxide target, oxigen ions and radicals are easily to be generated, thus Si is oxidized significantly. However, this teconique does not genarate them, resulting in clear interface between Si substrate and deposited films.", "subitem_description_type": "Abstract"}]}, "item_9_description_22": {"attribute_name": "内容記述", "attribute_value_mlt": [{"subitem_description": "研究課題/領域番号:11555086, 研究期間(年度):1999 – 2001", "subitem_description_type": "Other"}, {"subitem_description": "出典:「スパッタ・イオンプレーティング複合人工格子作製装置の開発研究」研究成果報告書 課題番号11555086\n(KAKEN:科学研究費助成事業データベース(国立情報学研究所))\n(https://kaken.nii.ac.jp/ja/grant/KAKENHI-PROJECT-11555086/)を加工して作成", "subitem_description_type": "Other"}]}, "item_9_description_5": {"attribute_name": "提供者所属", "attribute_value_mlt": [{"subitem_description": "金沢大学工学部", "subitem_description_type": "Other"}]}, "item_9_relation_28": {"attribute_name": "関連URI", "attribute_value_mlt": [{"subitem_relation_name": [{"subitem_relation_name_text": "https://kaken.nii.ac.jp/ja/search/?kw=50019767"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://kaken.nii.ac.jp/ja/search/?kw=50019767", "subitem_relation_type_select": "URI"}}, {"subitem_relation_name": [{"subitem_relation_name_text": "https://kaken.nii.ac.jp/ja/grant/KAKENHI-PROJECT-11555086/"}], "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://kaken.nii.ac.jp/ja/grant/KAKENHI-PROJECT-11555086/", "subitem_relation_type_select": "URI"}}]}, "item_9_version_type_25": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "畑, 朋延"}], "nameIdentifiers": [{"nameIdentifier": "11298", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "50019767", "nameIdentifierScheme": "e-Rad", "nameIdentifierURI": "https://kaken.nii.ac.jp/ja/search/?qm=50019767"}, {"nameIdentifier": "50019767", "nameIdentifierScheme": "研究者番号", "nameIdentifierURI": "https://nrid.nii.ac.jp/nrid/1000050019767"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2021-08-26"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "TE-PR-HATA-T-kaken 2016-2p.pdf", "filesize": [{"value": "100.3 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_11", "mimetype": "application/pdf", "size": 100300.0, "url": {"label": "TE-PR-HATA-T-kaken 2016-2p.pdf", "url": "https://kanazawa-u.repo.nii.ac.jp/record/57272/files/TE-PR-HATA-T-kaken 2016-2p.pdf"}, "version_id": "2d3a694d-2b04-4abd-beae-30f8452c15c2"}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "スパッタリング", "subitem_subject_scheme": "Other"}, {"subitem_subject": "薄膜", "subitem_subject_scheme": "Other"}, {"subitem_subject": "金属モード", "subitem_subject_scheme": "Other"}, {"subitem_subject": "高誘電率材料", "subitem_subject_scheme": "Other"}, {"subitem_subject": "制限反応", "subitem_subject_scheme": "Other"}, {"subitem_subject": "ZrO_2", "subitem_subject_scheme": "Other"}, {"subitem_subject": "MOSFET", "subitem_subject_scheme": "Other"}, {"subitem_subject": "フラッシュ蒸着法", "subitem_subject_scheme": "Other"}, {"subitem_subject": "エピキシャル成長", "subitem_subject_scheme": "Other"}, {"subitem_subject": "β-FeSi_2", "subitem_subject_scheme": "Other"}, {"subitem_subject": "人工超格子", "subitem_subject_scheme": "Other"}, {"subitem_subject": "ヘテロエピタキシャル", "subitem_subject_scheme": "Other"}, {"subitem_subject": "フラッシュ蒸着", "subitem_subject_scheme": "Other"}, {"subitem_subject": "SiGe", "subitem_subject_scheme": "Other"}, {"subitem_subject": "イオンプレーラィレグ", "subitem_subject_scheme": "Other"}, {"subitem_subject": "ヘテロエピタキシャル成長", "subitem_subject_scheme": "Other"}, {"subitem_subject": "反応性スパッタリング", "subitem_subject_scheme": "Other"}, {"subitem_subject": "イットリア安定化ジルコニア", "subitem_subject_scheme": "Other"}, {"subitem_subject": "S:Ge(シリコンゲルマニウム)", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Sputtering", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Thin Film", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Metallic Mode", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "High-k Material", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Limitted Reaction", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "ZrO2", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "MOSFET", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "research report", "resourceuri": "http://purl.org/coar/resource_type/c_18ws"}]}, "item_title": "スパッタ・イオンプレーティング複合人工格子作製装置の開発研究", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "スパッタ・イオンプレーティング複合人工格子作製装置の開発研究"}, {"subitem_title": "Development Research of Appratus for Artificial Lattice Utilizing Sputtering and Ion-Plating Combined Technique", "subitem_title_language": "en"}]}, "item_type_id": "9", "owner": "18", "path": ["2832"], "permalink_uri": "http://hdl.handle.net/2297/00063542", "pubdate": {"attribute_name": "公開日", "attribute_value": "2021-08-26"}, "publish_date": "2021-08-26", "publish_status": "0", "recid": "57272", "relation": {}, "relation_version_is_last": true, "title": ["スパッタ・イオンプレーティング複合人工格子作製装置の開発研究"], "weko_shared_id": -1}
スパッタ・イオンプレーティング複合人工格子作製装置の開発研究
http://hdl.handle.net/2297/00063542
http://hdl.handle.net/2297/000635423ebababe-6552-40c1-961e-e34155839037
名前 / ファイル | ライセンス | アクション |
---|---|---|
TE-PR-HATA-T-kaken 2016-2p.pdf (100.3 kB)
|
Item type | 報告書 / Research Paper(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2021-08-26 | |||||
タイトル | ||||||
タイトル | スパッタ・イオンプレーティング複合人工格子作製装置の開発研究 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Development Research of Appratus for Artificial Lattice Utilizing Sputtering and Ion-Plating Combined Technique | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18ws | |||||
資源タイプ | research report | |||||
著者 |
畑, 朋延
× 畑, 朋延 |
|||||
著者別表示 |
Hata, Tomonobu
× Hata, Tomonobu |
|||||
提供者所属 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 金沢大学工学部 | |||||
書誌情報 |
平成13(2001)年度 科学研究費補助金 基盤研究(B) 研究概要 en : 2001 Research Project Summary 巻 1999 – 2001, p. 2p., 発行日 2003-09-16 |
|||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | 制限反応スパッタリングと名付けた新しいスパッタリング法を研究開発した.この技法を用いて,次世代MOSFET用ゲート絶縁膜としてZrO2誘電体膜を形成した.Si基板表面の酸化が抑制され20を越える高い比誘電率が得られた.酸化物ターゲットを用いた通常のスパッタリング法では酸素イオンや活性種が励起されSi基板は直ちに酸化してしまうが,この堆積法では,そのような酸化種が発生しないので,Si基板とその上の堆積膜の界面は急峻に形成できる. | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | A new sputtering film deposition method, named Limited Reaction Sputtering Technique, was developed and investigated. Using this technique, ZrO2 dielectric films were synthsized for gate materials of next generation MOSFETs. The Si substrate surface oxidation was suppressed consequently a high specific dielectric constant as high as over 20 was obtained. On conventional sputtering technique using oxide target, oxigen ions and radicals are easily to be generated, thus Si is oxidized significantly. However, this teconique does not genarate them, resulting in clear interface between Si substrate and deposited films. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 研究課題/領域番号:11555086, 研究期間(年度):1999 – 2001 | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 出典:「スパッタ・イオンプレーティング複合人工格子作製装置の開発研究」研究成果報告書 課題番号11555086 (KAKEN:科学研究費助成事業データベース(国立情報学研究所)) (https://kaken.nii.ac.jp/ja/grant/KAKENHI-PROJECT-11555086/)を加工して作成 |
|||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
関連URI | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://kaken.nii.ac.jp/ja/search/?kw=50019767 | |||||
関連名称 | https://kaken.nii.ac.jp/ja/search/?kw=50019767 | |||||
関連URI | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://kaken.nii.ac.jp/ja/grant/KAKENHI-PROJECT-11555086/ | |||||
関連名称 | https://kaken.nii.ac.jp/ja/grant/KAKENHI-PROJECT-11555086/ |