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Novel oxidation process of hydrogenated amorphous silicon utilizing nitrous oxide plasma
https://doi.org/10.24517/00064702
https://doi.org/10.24517/0006470278101712-0840-4fd3-8e60-db39870853d0
名前 / ファイル | ライセンス | アクション |
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TE-PR-MORIMOTO-A-816.pdf (654.4 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2022-01-13 | |||||
タイトル | ||||||
タイトル | Novel oxidation process of hydrogenated amorphous silicon utilizing nitrous oxide plasma | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
ID登録 | ||||||
ID登録 | 10.24517/00064702 | |||||
ID登録タイプ | JaLC | |||||
著者 |
Masuda, Atsushi
× Masuda, Atsushi× Morimoto, Akiharu× Kumeda, Minoru× Shimizu, Tatsuo× Yonezawa, Yasuto× Minamikawa, Toshiharu |
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著者別表示 |
森本, 章治
× 森本, 章治× 久米田, 稔× 清水, 立生 |
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提供者所属 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系 | |||||
書誌情報 |
Applied Physics Letters 巻 61, 号 7, p. 816-818, 発行日 1992 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0003-6951 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1077-3118 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00543431 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1063/1.107754 | |||||
出版者 | ||||||
出版者 | American Institute of Physics | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | A novel oxidation process in hydrogenated amorphous silicon (a-Si:H) using nitrous oxide (N2O) plasma was studied in detail for the first time. The N2O-plasma oxidized a-Si:H has an excellent interface whose interfacial defect density is largely reduced compared with the O 2-plasma oxidized a-Si:H. It was elucidated that this oxide layer has almost stoichiometric composition and contains a small amount of N piling up at the interface between the oxide layer and a-Si:H layer. It also turned out that this process has less ion damage than the O2-plasma oxidation process. The reason for the reduction of the interfacial defect density is attributed to the presence of N at the interface and/or less ion damage in this process. | |||||
権利 | ||||||
権利情報 | Copyright © American Institute of Physics | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
関連URI | ||||||
識別子タイプ | URI | |||||
関連識別子 | http://apl.aip.org/ | |||||
関連名称 | http://apl.aip.org/ |