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Spin-polarized cation monovacancies in wurtzite structure semiconductors: first-principles study
https://doi.org/10.24517/00065298
https://doi.org/10.24517/00065298d7527952-81a8-45e2-99d3-edd574b54980
名前 / ファイル | ライセンス | アクション |
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SC-PR-SAITO-M-071001.pdf (445.4 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2022-02-25 | |||||
タイトル | ||||||
タイトル | Spin-polarized cation monovacancies in wurtzite structure semiconductors: first-principles study | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
ID登録 | ||||||
ID登録 | 10.24517/00065298 | |||||
ID登録タイプ | JaLC | |||||
著者 |
Widianto, Muhammad Yusuf Hakim
× Widianto, Muhammad Yusuf Hakim× Kadarisman, Hana Pratiwi× Yatmeidhy, Amran Mahfudh× Saito, Mineo |
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著者別表示 |
斎藤, 峯雄
× 斎藤, 峯雄 |
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提供者所属 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 金沢大学ナノマテリアル研究所 / 金沢大学理工研究域数物科学系 | |||||
書誌情報 |
Japanese Journal of Applied Physics 巻 59, 号 7, p. 071001, 発行日 2020-06-10 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0021-4922 | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1347-4065 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA12295836 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.35848/1347-4065/ab9654 | |||||
出版者 | ||||||
出版者 | Japan Society of Applied Physics / IOP Publishing | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We study spin-polarized cation vacancies in wurtzite structure semiconductors (BeO, ZnO, ZnS, CdS, BN, AlN, GaN and GaP) by using first-principles calculations based on the density functional theory. We find that C3v geometries are the most stable and are spin-polarized. Two majority spin electrons occupying the defect E level lead to the magnetic moment of 2 μ B in the case of II-VI semiconductors. On the contrary, in the case of III-V semiconductors, three majority spin electrons occupying the defect E and A1 levels induce the magnetic moment of 3 μ B . The spin polarization of cation vacancies in oxides and nitrides are found to be stable compared with other cation vacancies in II-VI and III-V semiconductors, respectively. We clarify that the effect of the symmetry lowering from C3v to C s is small and thus confirm that the spin polarized C3v geometries are the most stable. © 2020 The Japan Society of Applied Physics. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Embargo Period 12 months | |||||
権利 | ||||||
権利情報 | Copyright © 2020 Japan Society of Applied Physics / IOP Publishing | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
関連URI | ||||||
識別子タイプ | URI | |||||
関連識別子 | http://iopscience.iop.org/1347-4065/ | |||||
関連名称 | http://iopscience.iop.org/1347-4065/ | |||||
関連URI | ||||||
識別子タイプ | URI | |||||
関連識別子 | http://www.jsap.or.jp/ | |||||
関連名称 | http://www.jsap.or.jp/ | |||||
関連URI | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://iopscience.iop.org/article/10.35848/1347-4065/ab9654 | |||||
関連名称 | https://iopscience.iop.org/article/10.35848/1347-4065/ab9654 |