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{"_buckets": {"deposit": "48ff7433-f97c-4c83-8689-4b32565e8fb2"}, "_deposit": {"created_by": 3, "id": "7876", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "7876"}, "status": "published"}, "_oai": {"id": "oai:kanazawa-u.repo.nii.ac.jp:00007876", "sets": ["936"]}, "author_link": ["10800", "10799"], "item_4_biblio_info_8": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1992-01-01", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "310", "bibliographicPageStart": "305", "bibliographicVolumeNumber": "258", "bibliographic_titles": [{"bibliographic_title": "Materials Research Society Symposium Proceedings"}]}]}, "item_4_description_21": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "We have calclulated the ESR hyperfine parameters of threefold-coordinated Si atoms and twofold-coordinated P and N atoms in Si-based amorphous semiconductors using the density functional theory with a local-spin-density approximation. These calculated results have been compared with the observed ESR results.", "subitem_description_type": "Abstract"}]}, "item_4_publisher_17": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Materials Research Society"}]}, "item_4_relation_12": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type": "isIdenticalTo", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1557/proc-258-305", "subitem_relation_type_select": "DOI"}}]}, "item_4_source_id_11": {"attribute_name": "NCID", "attribute_value_mlt": [{"subitem_source_identifier": "AA10616881", "subitem_source_identifier_type": "NCID"}]}, "item_4_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0272-9172", "subitem_source_identifier_type": "ISSN"}]}, "item_4_version_type_25": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Ishii, Nobuhiko"}], "nameIdentifiers": [{"nameIdentifier": "10799", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Shimizu, Tatsuo"}], "nameIdentifiers": [{"nameIdentifier": "10800", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-10-03"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "TE-PR-ISHII-N-1992-305.pdf", "filesize": [{"value": "304.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 304800.0, "url": {"label": "TE-PR-ISHII-N-1992-305.pdf", "url": "https://kanazawa-u.repo.nii.ac.jp/record/7876/files/TE-PR-ISHII-N-1992-305.pdf"}, "version_id": "8fa7f2ac-34c3-4d29-b755-06f5dd2525c9"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Ab initio calculations for defects in silicon-based amorphous semiconductors", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Ab initio calculations for defects in silicon-based amorphous semiconductors"}]}, "item_type_id": "4", "owner": "3", "path": ["936"], "permalink_uri": "http://hdl.handle.net/2297/24539", "pubdate": {"attribute_name": "公開日", "attribute_value": "2017-10-03"}, "publish_date": "2017-10-03", "publish_status": "0", "recid": "7876", "relation": {}, "relation_version_is_last": true, "title": ["Ab initio calculations for defects in silicon-based amorphous semiconductors"], "weko_shared_id": 3}
Ab initio calculations for defects in silicon-based amorphous semiconductors
http://hdl.handle.net/2297/24539
http://hdl.handle.net/2297/245396a86abf9-acca-4522-a190-77db20113650
名前 / ファイル | ライセンス | アクション |
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TE-PR-ISHII-N-1992-305.pdf (304.8 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-10-03 | |||||
タイトル | ||||||
タイトル | Ab initio calculations for defects in silicon-based amorphous semiconductors | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Ishii, Nobuhiko
× Ishii, Nobuhiko× Shimizu, Tatsuo |
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書誌情報 |
Materials Research Society Symposium Proceedings 巻 258, p. 305-310, 発行日 1992-01-01 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0272-9172 | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10616881 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1557/proc-258-305 | |||||
出版者 | ||||||
出版者 | Materials Research Society | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We have calclulated the ESR hyperfine parameters of threefold-coordinated Si atoms and twofold-coordinated P and N atoms in Si-based amorphous semiconductors using the density functional theory with a local-spin-density approximation. These calculated results have been compared with the observed ESR results. | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |