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Semiconductor optical modulator by using electron depleting absorption control
http://hdl.handle.net/2297/24544
http://hdl.handle.net/2297/245447e599304-f9b9-4f86-9a7d-c5fa9dde6450
名前 / ファイル | ライセンス | アクション |
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TE-PR-YAMADA-M-1992-1063.pdf (415.9 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-10-03 | |||||
タイトル | ||||||
タイトル | Semiconductor optical modulator by using electron depleting absorption control | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Yamada, Minoru
× Yamada, Minoru× Noda, Kazuhiro× Kuwamura, Yuji× Nakanishi, Hirohumi× Imai, Kiyohumi |
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書誌情報 |
IEICE TRANSACTIONS on Electronics 巻 E75-C, 号 9, p. 1063-1070, 発行日 1992-09-20 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0916-8508 | |||||
出版者 | ||||||
出版者 | IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences = 電子情報通信学会 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Operation of a newly proposed semiconductor optical modulator based on absorption control by electron depletion around a p-n junction is demonstrated, forming preliminary structures of waveguide-type as well as panel-type (or surface-illuminated type) devices. The optical absorption is occurred at the intrinsic energy levels in the band structure not at the extended state into the band-gap. Performance of 35 dB on-off extinction ratio for 4 V variation of the applied voltage was obtained in a waveguide type device. Validity of the proposed mechanism were confirmed by getting large change of the absorption coefficient of around 5000 cm-1 over wide wavelength range of 30 nm. | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |