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GaInAsP/InP quantum wire lasers
http://hdl.handle.net/2297/19579
http://hdl.handle.net/2297/1957980632f26-2527-4bc9-8918-561d5873d8fc
名前 / ファイル | ライセンス | アクション |
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TE-PR-MARUYAMA-T-731.pdf (917.6 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2017-10-03 | |||||
タイトル | ||||||
タイトル | GaInAsP/InP quantum wire lasers | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Arai, Shigehisa
× Arai, Shigehisa× Maruyama, Takeo |
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提供者所属 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 金沢大学理工研究域電子情報学系 | |||||
書誌情報 |
IEEE Journal on Selected Topics in Quantum Electronics 巻 15, 号 3, p. 731-742, 発行日 2009-05-01 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1077-260X | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11036333 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1109/JSTQE.2008.2010872 | |||||
出版者 | ||||||
出版者 | IEEE = Institute of Electrical and Electronics Engineers | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Present status of GaInAsP/InP long-wavelength quantum wire lasers, fabricated by a method using electron beam exposure, dry etching, and two-step organometallic vapor-phase epitaxy, is described from aspects of low-damage interface formation and size uniformity of quantum wire structures. Even though superior lasing properties attributed to sharper gain spectrum over that of quantum well structure have not been realized yet, polarization anisotropic feature of the quantum wire structure and formation of good interfaces by this fabrication method were confirmed. Single-wavelength lasers consisting of quantum wire structure as the active and/or the passive regions have been realized as possible candidates for future integrated photonics. © 2006 IEEE. | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
シリーズ | ||||||
関連名称 | 5068482 |