2026-03-12T17:02:29Z https://kanazawa-u.repo.nii.ac.jp/oai

oai:kanazawa-u.repo.nii.ac.jp:00010988 2024-06-20T05:56:40Z 934:935:937

Low-flux elucidation of initial growth of Ge clusters deposited on Si(111)-7x7 observed by scanning tunneling microscopy Ansari, Z.A. アライ, トヨコ Arai, Toyoko Tomitori, M. Deposition of Ge on Si (111) -7×7 under very low Ge flux is examined using ultrahigh vacuum scanning tunneling microscopy; Ge atoms are deposited at 150°C under a flux of ∼0.005 or 0.05 ML/min. Initially Ge atoms are substituted for Si atoms on corner adatom sites of faulted half unit cells. At a Ge coverage of 0.08 ML under the lower flux, hollow-centered hexagonal Ge clusters with six protrusions are formed preferentially on faulted half unit cells, which are uniform and separated from other clusters. At the higher flux various types of clusters grow, frequently neighboring with others. This indicates that the low flux is needed to elucidate the stable type of Ge clusters grown on Si (111) -7×7. © 2009 The American Physical Society. 金沢大学理工研究域　数物科学系 American Institute of Physics 2009-01-05 2017-10-03 eng journal article VoR http://hdl.handle.net/2297/17500 https://kanazawa-u.repo.nii.ac.jp/records/10988 10.1103/PhysRevB.79.033302 AA11187113 1098-0121 Physical Review B - Condensed Matter and Materials Physics 79,033302 3 033302 https://kanazawa-u.repo.nii.ac.jp/record/10988/files/SC-PR-ARAI-T-033302.pdf application/pdf 370.7 kB 2017-10-03