2026-03-15T07:43:17Z https://kanazawa-u.repo.nii.ac.jp/oai

oai:kanazawa-u.repo.nii.ac.jp:00028618 2024-06-27T02:06:47Z 1896:1897:1898

Step instabilities on Si(111) vicinal face near 1 × 1 ↔ ′7 × 7 transition temperature during sublimation Ikawa, Kenta 49846 Sato, Masahide 213 20306533 20306533 20306533 On a Si(111) vicinal face near the structural transition temperature (860°C), the 7×7 structure and 1×1 structure coexist on a terrace. The 7×7 structure is on the upper side of steps and the 1×1 structure is on the lower side of steps. The diffusion coefficient on the 1×1 structure is larger than that on the 7×7 structure. In this paper, taking account of the difference in the diffusion coefficient, we study the possibility of step instabilities, step wandering and step bunching, occuring during sublimation. © 2009 The Physical Society of Japan. 金沢大学総合メディア基盤センター journal article Physical Society of Japan (JPS) 日本物理学会 2009-12-01 AM application/pdf Journal of the Physical Society of Japan 12 78 124602 AA00704814 0031-9015 https://kanazawa-u.repo.nii.ac.jp/record/28618/files/CS-SATO-M-124602.pdf http://hdl.handle.net/2297/20340 https://kanazawa-u.repo.nii.ac.jp/records/28618 eng 10.1143/JPSJ.78.124602 http://jpsj.ipap.jp/link?JPSJ/78/124602/ http://wwwsoc.nii.ac.jp/jps/ http://jpsj.ipap.jp/