2026-03-05T23:17:53Z https://kanazawa-u.repo.nii.ac.jp/oai

oai:kanazawa-u.repo.nii.ac.jp:00058441 2024-06-25T05:47:45Z 2438:4190:4191

Thermally induced metastable defects in hydrogenated amorphous silicon and silicon-carbon alloy films 森本, 章治 久米田, 稔 清水, 立生 Xu, Xixiang 14833 Okumura, Akihisa 102130 Morimoto, Akiharu 91155 60143880 Kumeda, Minoru 9766 30019773 30019773 Shimizu, Tatsuo 9767 30019715 Thermally induced metastable defects in hydrogenated amorphous silicon (a-Si:H) and silicon-carbon alloy (a-Si1-xCx:H) films are studied by electron spin resonance (ESR) and conductivity measurements. We found that both undoped and P-doped a-Si1-xCx:H films exhibit thermal-equilibrium phenomena similar to those in a-Si:H although they have much higher defect densities. By heating the samples in situ during ESR measurements, we were able to directly observe the density of dangling bonds in both a-Si:H and a-Si1-xCx:H as the samples move from a frozen-in state into a temperature-dependent equilibrium. The influence of surface states and long-term drift of exposed surface on the thermal-equilibrium process has also been extensively investigated. © 1988 The American Physical Society. 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系 journal article American Physical Society 1988 VoR application/pdf Physical Review B 12 38 8371 8376 AA00693547 0021-8979 1089-7550 https://kanazawa-u.repo.nii.ac.jp/record/58441/files/TE-PR-MORIMOTO-A-38.8371.pdf https://doi.org/10.24517/00064709 http://hdl.handle.net/2297/00064709 https://kanazawa-u.repo.nii.ac.jp/records/58441 eng 10.1103/PhysRevB.38.8371 http://jap.aip.org/ http://jap.aip.org/ Copyright © American Physical Society