@article{oai:kanazawa-u.repo.nii.ac.jp:00010045,
 author = {森本, 章治 and 久米田, 稔 and 清水, 立生 and Xu, Xixiang and Sasaki, Hiroyuki and Morimoto, Akiharu and Kumeda, Minoru and Shimizu, Tatsuo},
 issue = {14},
 journal = {Physical Review -Series B-},
 month = {May},
 note = {Temperature dependence of the thermal-equilibrium defect density in undoped a-Si:H, a-Si1-xCx:H, and a-Si1-xNx:H is obtained both by in situ electron-spin-resonance (ESR) measurements at elevated temperatures and by ESR measurements of frozen-in defects at room temperature. The experimental results confirm that the defects in these alloy films, even for films with the defect density as high as 1017 cm-3, can reach thermal equilibrium above a certain temperature (200350°C). Thickness dependence of the defect density after various thermal treatments shows that only the bulk defect density increases with temperature, with the exception that thin a-Si:H films (<1 m) exhibit some extra increase. Results of ESR, light-induced ESR (LESR), and constant-photocurrent method (CPM) measurements indicate that the charged-defect density in these films does not appreciably increase with temperature. Relaxation of the frozen-in defect density follows a stretched exponential form and the relaxation time increases with the defect density in these alloys. © 1990 The American Physical Society., 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報学系 / 金沢大学工学部},
 pages = {10049--10057},
 title = {Thermal-equilibrium defects in undoped hydrogenated amorphous silicon, silicon-carbon, and silicon-nitrogen},
 volume = {41},
 year = {1990}
}