{"created":"2023-07-27T06:26:21.689458+00:00","id":10045,"links":{},"metadata":{"_buckets":{"deposit":"2a3a8c0f-2840-4d7d-ab10-6e94f9ef536a"},"_deposit":{"created_by":3,"id":"10045","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"10045"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00010045","sets":["2438:4190:4191"]},"author_link":["9767","14833","132","92098","18597","14834","9766"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1990-05-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"14","bibliographicPageEnd":"10057","bibliographicPageStart":"10049","bibliographicVolumeNumber":"41","bibliographic_titles":[{"bibliographic_title":"Physical Review -Series B-"}]}]},"item_4_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"森本, 章治"}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"久米田, 稔"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"清水, 立生"}],"nameIdentifiers":[{},{}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Temperature dependence of the thermal-equilibrium defect density in undoped a-Si:H, a-Si1-xCx:H, and a-Si1-xNx:H is obtained both by in situ electron-spin-resonance (ESR) measurements at elevated temperatures and by ESR measurements of frozen-in defects at room temperature. The experimental results confirm that the defects in these alloy films, even for films with the defect density as high as 1017 cm-3, can reach thermal equilibrium above a certain temperature (200350°C). Thickness dependence of the defect density after various thermal treatments shows that only the bulk defect density increases with temperature, with the exception that thin a-Si:H films (<1 m) exhibit some extra increase. Results of ESR, light-induced ESR (LESR), and constant-photocurrent method (CPM) measurements indicate that the charged-defect density in these films does not appreciably increase with temperature. Relaxation of the frozen-in defect density follows a stretched exponential form and the relaxation time increases with the defect density in these alloys. © 1990 The American Physical Society.","subitem_description_type":"Abstract"}]},"item_4_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報学系 / 金沢大学工学部","subitem_description_type":"Other"}]},"item_4_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00010032","subitem_identifier_reg_type":"JaLC"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Physical Society"}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1103/PhysRevB.41.10049","subitem_relation_type_select":"DOI"}}]},"item_4_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.scopus.com/record/display.url?eid=2-s2.0-0042911196&origin=resultslist&sort=plf-f&src=s&sid=F6hms6Cj5qviMqR7MtfaNW6%3a110&sot=q&sdt=b&sl=90&s=TITLE-ABS-KEY-AUTH%28Thermal-equilibrium+defects+in+undoped+hydrogenated+amorphous+silicon%2c%29&relpos=8&relpos=8","subitem_relation_type_select":"URI"}}]},"item_4_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA11289372","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1098-0121","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Xu, Xixiang"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sasaki, Hiroyuki"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Morimoto, Akiharu"}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"Kumeda, Minoru"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Shimizu, Tatsuo"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"TE-PR-1990-MORIMOTO-A-10049.pdf","filesize":[{"value":"1.5 MB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-1990-MORIMOTO-A-10049.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/10045/files/TE-PR-1990-MORIMOTO-A-10049.pdf"},"version_id":"1402a51d-3427-48c2-9cc5-6574a70a72c3"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Thermal-equilibrium defects in undoped hydrogenated amorphous silicon, silicon-carbon, and silicon-nitrogen","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Thermal-equilibrium defects in undoped hydrogenated amorphous silicon, silicon-carbon, and silicon-nitrogen"}]},"item_type_id":"4","owner":"3","path":["4191"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"10045","relation_version_is_last":true,"title":["Thermal-equilibrium defects in undoped hydrogenated amorphous silicon, silicon-carbon, and silicon-nitrogen"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T10:10:08.340188+00:00"}