{"created":"2023-07-27T06:26:55.480334+00:00","id":10849,"links":{},"metadata":{"_buckets":{"deposit":"ffe8dcaa-c02b-4477-bd80-64ed8ce1e3a4"},"_deposit":{"created_by":3,"id":"10849","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"10849"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00010849","sets":["4162:4169:4188"]},"author_link":["84972","16653","16652","79748","16654"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-08-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageStart":"041301","bibliographicVolumeNumber":"54","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics"}]}]},"item_4_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"斎藤, 峯雄"}],"nameIdentifiers":[{},{}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"By using first-principles calculations, we study the formation energy and concentration of the silicon monovacancy. We use large-scale supercells containing up to 1728 atomic sites and confirm the convergence of calculational results with respect to the cell size. The formation energy is calculated to be 3.46 eV, and the vacancy concentration at the silicon melting point is estimated to be 7.4 × 1016cm-3. These values are consistent with experimental results. We find that the vibrational effect significantly increases the vacancy concentration about 104 times. © 2015 The Japan Society of Applied Physics.","subitem_description_type":"Abstract"}]},"item_4_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Embargo Period 12 months","subitem_description_type":"Other"}]},"item_4_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学ナノマテリアル研究所 / 金沢大学理工研究域数物科学系","subitem_description_type":"Other"}]},"item_4_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00010836","subitem_identifier_reg_type":"JaLC"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Japan Society of Applied Physics = 応用物理学会"}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.7567/JJAP.54.041301","subitem_relation_type_select":"DOI"}}]},"item_4_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.jsap.or.jp/","subitem_relation_type_select":"URI"}}]},"item_4_rights_23":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2015 The Japan Society of Applied Physics"}]},"item_4_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA00690800","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-4922","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sholihun, S."}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Saito, Mineo"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Ohno, Takahisa"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yamasaki, Takahiro"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"SC-PR-SAITO-M-041301.pdf","filesize":[{"value":"206.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"SC-PR-SAITO-M-041301.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/10849/files/SC-PR-SAITO-M-041301.pdf"},"version_id":"35a3f3ee-c3a5-4b69-b7f7-3bd95f8db161"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Density-functional-theory-based calculations of formation energy and concentration of the silicon monovacancy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Density-functional-theory-based calculations of formation energy and concentration of the silicon monovacancy"}]},"item_type_id":"4","owner":"3","path":["4188"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"10849","relation_version_is_last":true,"title":["Density-functional-theory-based calculations of formation energy and concentration of the silicon monovacancy"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T09:51:33.839781+00:00"}