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Evidence of temperature dependence of initial adsorption sites of Ge atoms on Si(111)-7x7
http://hdl.handle.net/2297/17498
http://hdl.handle.net/2297/174988afa7d9a-94a4-4aa9-9306-460d19ed809a
| 名前 / ファイル | ライセンス | アクション |
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SC-PR-ARAI-T-171902.pdf (339.5 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
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| 公開日 | 2017-10-03 | |||||
| タイトル | ||||||
| タイトル | Evidence of temperature dependence of initial adsorption sites of Ge atoms on Si(111)-7x7 | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| 著者 |
Ansari, Z.A.
× Ansari, Z.A.× Tomitori, M.× Arai, Toyoko |
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| 提供者所属 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 金沢大学理工研究域 数物科学系 | |||||
| 書誌情報 |
Applied Physics Letters 巻 88, p. 171902, 発行日 2006-01-01 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0003-6951 | |||||
| NCID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AA00543431 | |||||
| DOI | ||||||
| 関連タイプ | isIdenticalTo | |||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.2198109 | |||||
| 出版者 | ||||||
| 出版者 | American Institute of Physics | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Small amounts of Ge atoms are deposited on Si (111) -7×7 surfaces at room temperature (RT) and at 100 °C to clarify the initial adsorption sites using scanning tunneling microscopy. At RT Ge atoms are adsorbed at high coordination B2 sites around the rest atoms, as predicted by Cho and Kaxiras [Surf. Sci. 396, L261 (1998)]. On one hand, at 100 °C Ge atoms are adsorbed on corner adatom sites. With increasing Ge coverage the corner sites are gradually occupied, followed by Ge adsorption at center adatom sites, resulting in Ge cluster growth with a size of the half unit cell. © 2006 American Institute of Physics. | |||||
| 著者版フラグ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
