{"created":"2023-07-27T06:27:01.222282+00:00","id":10988,"links":{},"metadata":{"_buckets":{"deposit":"f3e87431-8ad1-49b4-bb78-00e0451b4fe8"},"_deposit":{"created_by":3,"id":"10988","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"10988"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00010988","sets":["934:935:937"]},"author_link":["16964","15584","16965"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-01-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageStart":"033302","bibliographicVolumeNumber":"79,033302","bibliographic_titles":[{"bibliographic_title":"Physical Review B - Condensed Matter and Materials Physics"}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Deposition of Ge on Si (111) -7×7 under very low Ge flux is examined using ultrahigh vacuum scanning tunneling microscopy; Ge atoms are deposited at 150°C under a flux of ∼0.005 or 0.05 ML/min. Initially Ge atoms are substituted for Si atoms on corner adatom sites of faulted half unit cells. At a Ge coverage of 0.08 ML under the lower flux, hollow-centered hexagonal Ge clusters with six protrusions are formed preferentially on faulted half unit cells, which are uniform and separated from other clusters. At the higher flux various types of clusters grow, frequently neighboring with others. This indicates that the low flux is needed to elucidate the stable type of Ge clusters grown on Si (111) -7×7. © 2009 The American Physical Society.","subitem_description_type":"Abstract"}]},"item_4_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学理工研究域　数物科学系","subitem_description_type":"Other"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1103/PhysRevB.79.033302","subitem_relation_type_select":"DOI"}}]},"item_4_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA11187113","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1098-0121","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ansari, Z.A."},{"creatorName":"アライ, トヨコ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"16964","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Arai, Toyoko"}],"nameIdentifiers":[{"nameIdentifier":"15584","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"20250235","nameIdentifierScheme":"金沢大学研究者情報","nameIdentifierURI":"http://ridb.kanazawa-u.ac.jp/public/detail.php?kaken=20250235"},{"nameIdentifier":"20250235","nameIdentifierScheme":"研究者番号","nameIdentifierURI":"https://nrid.nii.ac.jp/nrid/1000020250235"}]},{"creatorNames":[{"creatorName":"Tomitori, M."}],"nameIdentifiers":[{"nameIdentifier":"16965","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"SC-PR-ARAI-T-033302.pdf","filesize":[{"value":"370.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"SC-PR-ARAI-T-033302.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/10988/files/SC-PR-ARAI-T-033302.pdf"},"version_id":"9e5efe41-95d9-4e8a-b55c-7e77d1a29ede"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Low-flux elucidation of initial growth of Ge clusters deposited on Si(111)-7x7 observed by scanning tunneling microscopy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Low-flux elucidation of initial growth of Ge clusters deposited on Si(111)-7x7 observed by scanning tunneling microscopy"}]},"item_type_id":"4","owner":"3","path":["937"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"10988","relation_version_is_last":true,"title":["Low-flux elucidation of initial growth of Ge clusters deposited on Si(111)-7x7 observed by scanning tunneling microscopy"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-06-20T05:56:40.639044+00:00"}