@article{oai:kanazawa-u.repo.nii.ac.jp:00011795,
 author = {Suzuki, Masakuni and Bando, Tsutomu and 鈴木, 正国 and 坂東, 務},
 issue = {2},
 journal = {金沢大学工学部紀要 = Memoirs of the Faculty of Technology Kanazawa University},
 month = {Sep},
 note = {Recently, amorphous semiconductors have been remarked as the materials showing the electrical switching and memory effects. It is suggested that the disordered structures play important roles for those phenomena. 
Differential thermal analysis has distinguished between materials which show only ovonic switching action (threshold type) and those which show switching effect with memory action (memory type). 
The crystallizations in threshold type materials were attained by the annealing in some conditions, nevertheless the crystallization could not be detected by DTA. It is useful to study the crystallization of amorphous materials, because the crystalline phases due to annealing would reflect the original amorphous structures. 
From the studies of the crystallization, it is concluded that the translational order does not exist in both types and the compositional order would not exist in threshold type but would exist in memory type materials.},
 pages = {159--165},
 title = {カルコゲナイド系非晶質半導体の研究 : 熱処理による結晶化},
 volume = {7},
 year = {1973}
}