{"created":"2023-07-27T06:27:35.151306+00:00","id":11797,"links":{},"metadata":{"_buckets":{"deposit":"5d4320ce-e5c3-4f9d-a25d-c28be1cee332"},"_deposit":{"created_by":3,"id":"11797","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"11797"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00011797","sets":["934:941:1024:1034"]},"author_link":["11441"],"item_7_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1973-09-25","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"184","bibliographicPageStart":"177","bibliographicVolumeNumber":"7","bibliographic_titles":[{"bibliographic_title":"金沢大学工学部紀要 = Memoirs of the Faculty of Technology Kanazawa University"}]}]},"item_7_creator_34":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hasegawa, Seiichi"}],"nameIdentifiers":[{},{},{}]}]},"item_7_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Results of measurement so far published on the electronic stopping power in various amorphous and crystalline substrates show periodic dependence of the stopping power on the atomic number of the incident ions. On the contrary, the theoretical values for the electronic stopping power in amorphous substrates made public up to now increase monotonously with the atomic number. In the present paper, the author proposes to apply the atomic wave function instead of commonly used Thomas-Fermi treatment for determ­ining theoretically the electronic stopping power in amorphous substrate, especially with respect to the origin of its periodicity with atomic numbers. Results of calculations confir­ming the validity of the proposal are added. ","subitem_description_type":"Abstract"}]},"item_7_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00011784","subitem_identifier_reg_type":"JaLC"}]},"item_7_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"金沢大学工学部 = Faculty of Technology Kanazawa University"}]},"item_7_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AN00044309","subitem_source_identifier_type":"NCID"}]},"item_7_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0022-832X","subitem_source_identifier_type":"ISSN"}]},"item_7_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"長谷川, 誠一"}],"nameIdentifiers":[{"nameIdentifier":"11441","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"10019755","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=10019755"},{"nameIdentifier":"10019755","nameIdentifierScheme":"研究者番号","nameIdentifierURI":"https://nrid.nii.ac.jp/nrid/1000010019755"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"AN00044309-7-2-177.pdf","filesize":[{"value":"146.8 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"AN00044309-7-2-177.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/11797/files/AN00044309-7-2-177.pdf"},"version_id":"ad8ec4f2-f4a2-4bca-ba87-881f37eca1f5"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"非晶質基板への高エネルギー入射イオンに対する電子阻止能","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"非晶質基板への高エネルギー入射イオンに対する電子阻止能"},{"subitem_title":"Electronic Stopping Power for Energetic Implanted Ions in Amorphous Substrates","subitem_title_language":"en"}]},"item_type_id":"7","owner":"3","path":["1034"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"11797","relation_version_is_last":true,"title":["非晶質基板への高エネルギー入射イオンに対する電子阻止能"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T09:04:40.116901+00:00"}