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半導体における不純物散乱
https://doi.org/10.24517/00011840
https://doi.org/10.24517/0001184014cdf1fa-b929-402e-ba85-b9681121f480
名前 / ファイル | ライセンス | アクション |
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Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
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公開日 | 2017-10-03 | |||||
タイトル | ||||||
タイトル | 半導体における不純物散乱 | |||||
タイトル | ||||||
タイトル | Impurity scattering in semiconductors | |||||
言語 | en | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ID登録 | ||||||
ID登録 | 10.24517/00011840 | |||||
ID登録タイプ | JaLC | |||||
著者 |
清水, 立生
× 清水, 立生 |
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著者別表示 |
Shimizu, Tatsuo
× Shimizu, Tatsuo |
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書誌情報 |
金沢大学工学部紀要 = Memoirs of the Faculty of Technology Kanazawa University 巻 3, 号 2, p. 54-60, 発行日 1963-12-01 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0022-832X | |||||
NCID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00044309 | |||||
出版者 | ||||||
出版者 | 金沢大学工学部 = Faculty of Technology Kanazawa University | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | In this paper, we consider the difference of the magnitude of ionized impurity scattering between Sb and As impurities in Ge found experimentally by Furukawa. We calculate the effect of impurity core potential, shear strain around the impurity, and volume dilatation due to the impurity. The interference term between usual screened Coulomb potential and each of them seems to be responsible for the difference, and the effect of impurity core potential may be dominant. Next, we consider the n-⁴/³ dependence of low temperature mobility of PbTe on carrier concentration found by Kanai et al. It seems to be explained also by the carrier scattering due to impurity core potential. In these calculations we have neglected the mass anisotropy of carrier. But the anisotropy is essential in case of calculating the effect of shear strain. |
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著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |