{"created":"2023-07-27T06:27:43.485284+00:00","id":11995,"links":{},"metadata":{"_buckets":{"deposit":"1c0fe645-ea66-48f4-87a8-9fa461e7deb5"},"_deposit":{"created_by":3,"id":"11995","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"11995"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00011995","sets":["934:1052:1054:1056"]},"author_link":["113","18859","18858","18856","18857"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013-02-01","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"154","bibliographicPageStart":"145","bibliographicVolumeNumber":"4","bibliographic_titles":[{"bibliographic_title":"Recent development in computational science : Selected Papers from the International Symposium on Computational Science - International Symposium on Computational Science Kanazawa University, Japan"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{}],"nameIdentifiers":[{},{},{},{}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"By using tight-binding molecular dynamics with Fermi operator expansion, we study vacancy defects in Silicon. The code has been developed for checking silicon crystal, point defect formation energies, etc. The crystal configuration for checking varies among the systems of 64, 216, 512, and 1000 atoms. We have also checked the expansion condition of Fermi operator; the smearing width (∆ε), the maximum order of expansion polynomials. The testing shows the good results, compared with the ab initio results. The dynamical behaviors of defects both in the liquid state and the non-self-diffusion state, are still being investigated. In order to support the data analysis, a visualization of multi-vacancy is also constructed.","subitem_description_type":"Abstract"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00011982","subitem_identifier_reg_type":"JaLC"}]},"item_9_publisher_17":{"attribute_name":"公開者","attribute_value_mlt":[{"subitem_publisher":"Kanazawa e-Publishing"}]},"item_9_rights_23":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Organizing Committee of ISCS 2013"}]},"item_9_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2223-0785","subitem_source_identifier_type":"ISSN"}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-03"}],"displaytype":"detail","filename":"ISCS2013Proceedings-145-154.pdf","filesize":[{"value":"1.2 MB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"ISCS2013Proceedings-145-154.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/11995/files/ISCS2013Proceedings-145-154.pdf"},"version_id":"960b0375-fc71-4c08-9520-d27b3d3632aa"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"Tight-Binding Molecular Dynamics with Fermi Operator Expansion:Application to Vacancy Defects in Silicon","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Tight-Binding Molecular Dynamics with Fermi Operator Expansion:Application to Vacancy Defects in Silicon"}]},"item_type_id":"9","owner":"3","path":["1056"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-03"},"publish_date":"2017-10-03","publish_status":"0","recid":"11995","relation_version_is_last":true,"title":["Tight-Binding Molecular Dynamics with Fermi Operator Expansion:Application to Vacancy Defects in Silicon"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T10:58:54.116973+00:00"}