@article{oai:kanazawa-u.repo.nii.ac.jp:00013177,
 author = {中山, 和也 and 秋田, 純一 and Nakayama, Kazuya and Takata, Masaki and Kasai, T. and Kitagawa, Akio and Akita, Junichi},
 issue = {17},
 journal = {Journal of Physics D: Applied Physics},
 month = {Sep},
 note = {Phase change nonvolatile memory devices composed of SeSbTe chalcogenide semiconductor thin film were fabricated. The resistivity of the SeSbTe system was investigated to apply to multi-level data storage. The chalcogenide semiconductor acts as a programmable resistor that has a large dynamic range. The resistance of the chalcogenide semiconductor can be set to intermediate resistances between the amorphous and crystalline states using electric pulses of a specified power, and it can be controlled by repetition of the electric pulses. The size of the memory cell used in this work is 200 nm thick with a contact area of 1 µm diameter. The resistance of the chalcogenide semiconductor gradually varies from 41 kΩ to 840 Ω within octal steps. The resistance of the chalcogenide semiconductor decreases with increasing number of applied pulses. The step-down characteristic of the resistance can be explained as the crystalline region of the active phase change region increases with increasing number of applied pulses. The extent of crystallization was also estimated by the overall resistivity of the active region of the memory cell., 金沢大学融合研究域融合科学系},
 pages = {5061--5065},
 title = {Pulse number control of electrical resistance for multi-level storage based on phase change},
 volume = {40},
 year = {2007}
}