@article{oai:kanazawa-u.repo.nii.ac.jp:00028544,
 author = {Sato, Masahide and Mori, T. and Uwaha, Makio and Hirose, Yukio and 佐藤, 正英 and 森, 智徳 and 上羽, 牧夫 and 広瀬, 幸雄},
 issue = {2},
 journal = {Journal of the Japanese Association of Crystal Growth = 日本結晶成長学会誌},
 month = {Jul},
 note = {We study step bunching induced by drift flow of adatoms. With alternation of anisotropic diffusion coefficient like a Si(001) vicinal face, the step bunching occurs irrespective of the drift direction. When we neglect evaporation of adatoms, step bunching with step-down drift is faster than that with step-up drift. With increasing the evaporation, the difference of growth rate becomes small., 金沢大学総合メディア基盤センター},
 title = {Si(001)微斜面上の吸着原子の流れによるステップバンチング : 結晶成長理論シンポジウム},
 volume = {29},
 year = {2002}
}