@article{oai:kanazawa-u.repo.nii.ac.jp:00028545,
 author = {Sato, Masahide and Uwaha, Makio and Saito, Yukio and 佐藤, 正英 and 上羽, 牧夫 and 齋藤, 幸夫},
 issue = {3},
 journal = {Journal of the Japanese Association of Crystal Growth = 日本結晶成長学会誌},
 month = {Aug},
 note = {With a Si(001) vicinal in mind, we study step bunching induced by drift of adatoms. In 1-dimensional model, bunches with step-down drift grow faster than those with step-up drift. In 2-dimensional model, the bunches with step-down drift are straight and those with step-up drift are fluctuated large. By the difference of the 2-dimensional pattern, the bunches with step-up drift grow as fast as those with step-down drift., 金沢大学総合メディア基盤センター},
 title = {17pC11 シリコン(001)微斜面でのステップ束の2次元パターンと成長則 : 結晶成長理論,第35回結晶成長国内会議},
 volume = {32},
 year = {2005}
}