@article{oai:kanazawa-u.repo.nii.ac.jp:00028546,
 author = {Sato, Masahide and 佐藤, 正英},
 issue = {4},
 journal = {Journal of the Japanese Association of Crystal Growth = 日本結晶成長学会誌},
 month = {Nov},
 note = {By using a step flow model, we study step bunching on a Si(001) vicinal face in growth On the Si(001) vicinal face, rough steps arid smooth steps appear alternately and the anisotropy of the surface diffsuiori changes on consecutive terraces. With the alternation of the diffusion coefficients, the vicinal face is stable for the step bunching. When the aternation of the kinetic coefficients are taken into account as the difference of the two types of steps, the step bunching occurs if the steps are impermeable., 金沢大学総合メディア基盤センター},
 title = {02aC05 シリコン(001)微斜面の成長時のステップのバンチング :結晶成長理論 (2), 第36回結晶成長国内会議},
 volume = {33},
 year = {2006}
}