{"created":"2023-07-27T06:39:54.906706+00:00","id":28547,"links":{},"metadata":{"_buckets":{"deposit":"7eaefd3a-94ae-4483-9196-f53a089d8253"},"_deposit":{"created_by":3,"id":"28547","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"28547"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00028547","sets":["1896:1897:1898"]},"author_link":["213","49806"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-03-31","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"44","bibliographicPageStart":"39","bibliographicVolumeNumber":"33","bibliographic_titles":[{"bibliographic_title":"Journal of the Japanese Association of Crystal Growth = 日本結晶成長学会誌"}]}]},"item_4_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sato, Masahide"}],"nameIdentifiers":[{},{}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"シリコン結晶に直流電流を流して加熱すると,等間隔な直線ステップ列からなる微斜面が不安定になり,ステップの束形成(バンチング)や蛇行と呼ばれる不安定化が起きる.これらの不安定化の原因は,直流電流により引き起こされる吸着原子の流れと考えられている.ここでは,拡散の異方性が90度づつ異なるテラスが交互に現れるシリコン(001)微斜面を念頭に置き,吸着原子の流れにより生じるステップの不安定化について理論的に調べた結果を報告する. Si vicinal faces are unstable when they are heated by direct electric current. An equidistant train of straight steps shows two types of instabilities, step bunching and step wandering. The cause of the instabilities is the drift of adatoms induced by the current. We study the step instabilities caused by the drift on a Si (001) vicinal, where two kinds of terraces with different diffusion anisotropy appear alternately.","subitem_description_type":"Abstract"}]},"item_4_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学総合メディア基盤センター","subitem_description_type":"Other"}]},"item_4_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00028534","subitem_identifier_reg_type":"JaLC"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"The Japanese Association for Crystal Growth (JACG) = 日本結晶成長学会"}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.19009/jjacg.33.1_39","subitem_relation_type_select":"DOI"}}]},"item_4_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://wwwsoc.nii.ac.jp/jacg/","subitem_relation_type_select":"URI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://ci.nii.ac.jp/naid/110004735432/en/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://www.jstage.jst.go.jp/browse/jjacg/-char/ja"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.jstage.jst.go.jp/browse/jjacg/-char/ja","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"http://www.jacg.jp/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.jacg.jp/","subitem_relation_type_select":"URI"}}]},"item_4_rights_23":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"本文データは日本結晶成長学会の許諾に基づきCiNiiから複製したものである"}]},"item_4_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AN00188386","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0385-6275","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐藤, 正英"}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-05"}],"displaytype":"detail","filename":"CS-PR-SATO-M-39.pdf","filesize":[{"value":"982.5 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"CS-PR-SATO-M-39.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/28547/files/CS-PR-SATO-M-39.pdf"},"version_id":"96fd6434-30ea-4bf6-a30f-976e531f9486"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"シリコン(001)微斜面でのステップのパターン形成 : <小特集2> 結晶成長の基礎-多様な展開","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"シリコン(001)微斜面でのステップのパターン形成 : <小特集2> 結晶成長の基礎-多様な展開"},{"subitem_title":"Pattern Formation of Steps on a Si (001) Vicinal Face : <Special Issue 2> Fundamentals of Crystal Growth-Its Evolution in Diverse Areas","subitem_title_language":"en"}]},"item_type_id":"4","owner":"3","path":["1898"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-05"},"publish_date":"2017-10-05","publish_status":"0","recid":"28547","relation_version_is_last":true,"title":["シリコン(001)微斜面でのステップのパターン形成 : <小特集2> 結晶成長の基礎-多様な展開"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T11:03:42.497975+00:00"}