{"created":"2023-07-27T06:39:55.862714+00:00","id":28567,"links":{},"metadata":{"_buckets":{"deposit":"f2aba452-04be-4baf-a934-06b337b8068c"},"_deposit":{"created_by":3,"id":"28567","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"28567"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00028567","sets":["1896:1897:1898"]},"author_link":["49749","49777","2743","213","49718"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-03-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"17","bibliographicPageStart":"14","bibliographicVolumeNumber":"318","bibliographic_titles":[{"bibliographic_title":"Journal of Crystal Growth"}]}]},"item_4_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐藤, 正英 "}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"上羽, 牧夫"}],"nameIdentifiers":[{},{}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"During deposition of Ga atoms, the structure of a Si(111) vicinal face is transformed from the 3×3 structure to the 6.3×6.3 structure. The transformation occurs preferentially from the lower side of steps. Since the density of Si atoms needed to form the 6.3×6.3 structure is lower than that to form the 3×3 structure, Si atoms are supplied onto the surface during the structural transition. The steps advance by incorporating the extra adatoms, and show a finger-like wandering pattern (H. Hibino, H. Kageshima, M. Uwaha, Surf. Sci. 602 (2008) 2421). To study the formation of the finger-like pattern, we carry out Monte Carlo simulations. When atoms are supplied immediately in front of a straight step, the step becomes unstable. Step wandering occurs and a step shows a finger-like pattern. The characteristic period of the fingers is consistent with the linear stability analysis and proportional to (β̃/V)1/2, where β̃ is the step stiffness and V is the step velocity (deposition rate). © 2010 Elsevier B.V. All rights reserved.","subitem_description_type":"Abstract"}]},"item_4_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Embargo Period 12 months","subitem_description_type":"Other"}]},"item_4_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学総合メディア基盤センター","subitem_description_type":"Other"}]},"item_4_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00028554","subitem_identifier_reg_type":"JaLC"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier B.V."}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.jcrysgro.2010.10.093","subitem_relation_type_select":"DOI"}}]},"item_4_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.elsevier.com/locate/issn/00220248","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"http://www.journals.elsevier.com/journal-of-crystal-growth/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.journals.elsevier.com/journal-of-crystal-growth/","subitem_relation_type_select":"URI"}}]},"item_4_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA00696341","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0022-0248","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"1873-5002","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sato, Masahide"}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"Kondo, Shinji"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Uwaha, Makio"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-05"}],"displaytype":"detail","filename":"INFO-PR-SATO-M-14.pdf","filesize":[{"value":"22.9 MB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"INFO-PR-SATO-M-14.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/28567/files/INFO-PR-SATO-M-14.pdf"},"version_id":"b79df739-4e1b-4e13-b268-f16a4bb90169"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Formation of finger-like step patterns on a Si(111) vicinal face","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Formation of finger-like step patterns on a Si(111) vicinal face"}]},"item_type_id":"4","owner":"3","path":["1898"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-05"},"publish_date":"2017-10-05","publish_status":"0","recid":"28567","relation_version_is_last":true,"title":["Formation of finger-like step patterns on a Si(111) vicinal face"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T11:02:32.597567+00:00"}