@article{oai:kanazawa-u.repo.nii.ac.jp:00028620,
 author = {佐藤, 正英 and 上羽, 牧夫 and 広瀬, 幸雄 and Sato, Masahide and Mori, Tomonori and Uwaha, Makio and Hirose, Yukio},
 issue = {7},
 journal = {Journal of the Physical Society of Japan},
 month = {Jul},
 note = {On a Si(001) vicinal face, where the direction of fast surface diffusion alternates on consecutive terraces, step bunching has been observed under direct current heating. By using a one-dimensional step model with drift of adatoms, we study growth laws of step bunches. If evaporation is negligible, the average number N of steps in a bunch increases with time as N ∝ tβ with β less than and double approximate 1/2. The growth exponent β weakly depends on the repulsive interaction potential between steps. When steps at a distance l interact with the repulsive potential ζ ∝ 1/l ν, the average step distance in a bunch lb decreases as lb ∝ N-α with α ≈ 3/2(ν + 2). The exponents α and β are related as β ≈ 1/(2 + α). The simulation results are consistent with experiment if we take account of both logarithmic and ν = 2 potentials, which are expected in this system. The growth rate of the bunch size with step-down drift is faster than that with step-up drift. If evaporation of adatoms is significant, the difference of the growth rate in the opposite drift directions becomes small. The apparent exponent β depends on the drift direction, and is larger with step-up drift. © 2004 The Physical Society of Japan., 金沢大学総合メディア基盤センター},
 pages = {1827--1832},
 title = {Growth of step bunches on a Si(001) vicinal face with drift of adatoms},
 volume = {73},
 year = {2004}
}