@article{oai:kanazawa-u.repo.nii.ac.jp:00028621,
 author = {佐藤, 正英 and 上羽, 牧夫 and 広瀬, 幸雄 and Sato, Masahide and Uwaha, Makio and Hirose, Yukio},
 issue = {4},
 journal = {Journal of the Physical Society of Japan},
 month = {Apr},
 note = {We study the effect of two-dimensionality on step bunching on a Si(001) vicinal face heated by direct electric current. When the anisotropy of the diffusion coefficient changes alternately on consecutive terraces like a Si(001) vicinal face, bunching occurs with the drift of adatoms. If the wandering fluctuation of step bunches is neglected as in the one-dimensional model, the bunching with step-down drift is faster than that with step-up drift in contradiction with experiment (Latyshev et al.: Appl. Surf. Sci. 130-132 (1998) 139). In a two-dimensional model with a wide system width, the step bunches wander heavily with step-up drift, and the recombination of neighboring bunches occurs more frequently than those with step-down drift. The bunching with step-up drift is accelerated and can be faster than that with step-down drift. ©2006 The Physical Society of Japan.., 金沢大学総合メディア基盤センター},
 pages = {436011--436014},
 title = {Effect of two-dimensionality on step bunching on a Si(001) vicinal face},
 volume = {75},
 year = {2006}
}