{"created":"2023-07-27T06:44:36.821105+00:00","id":34900,"links":{},"metadata":{"_buckets":{"deposit":"ed6ef0bb-67b5-4b60-90b4-2ec64e4a7bae"},"_deposit":{"created_by":3,"id":"34900","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"34900"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00034900","sets":["2812:2813:2838"]},"author_link":["132","91155"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1996-03-01","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"9p.","bibliographicVolumeNumber":"1994-1995","bibliographic_titles":[{"bibliographic_title":"平成7(1995)年度 科学研究費補助金 一般研究(C) 研究成果報告書"},{"bibliographic_title":"1995 Fiscal Year Final Research Report","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{}],"nameIdentifiers":[{},{}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"レーザアブレーション法を用いた本研究の目的は、不揮発メモリの疲労特性の機構解明とその改善である。不揮発メモリとしては金属/強誘電体/金属(MFM)型メモリと金属/強誘電体/絶緑体/半導体(MFIS)FET型メモリがあるが、本研究では、いずれについても新しい電極、新しい絶緑体層を提案しメモリセルを構成した。 また、一部高誘電率誘電体薄膜として注目されているBa_xSr_<1-x>TiO_3についても研究を行った。 MFM型メモリでは 我々がPb(Zr_<1-x>Ti_x)O_3(PZT)用電極として提案しているNi合金を用いてPZT不揮発メモリを構成し、疲労の周波数特性を調べた。その結果、疲労特性において大きな周波数依存性を有することが明かとなった。これはNi合金上のPZTは結晶性があまり良くなく、抗電界が大きくスイッチング速度が小さくなっているためと考えられる。また、この疲労は電極との界面からPZT側へ均一に進行する疲労モデルで説明された。さらに、本メモリはスイッチング電荷量は小さいものの、周波数50kHzにおいて10^<10>回のスイッチング後も初期の電荷量を失わず高い疲労耐性を示した。結晶性と疲労特性の関係を明かにするため配向性の異なるYBa_2Cu_3O_x(YBCO)電極上にPZTを形成し、疲労特性を調べた。その結果、疲労特性はPZTの結晶性よりむしろ初期スイッチング電荷量の逆数と良い相関を示し、疲労特性を改善するにはスイッチング電荷量を低減すれば良いことが明かとなった。また、Ni合金の代わりに、新しい電極としてTi_<1-x>Al_xN(TAN)電極を提案し、当電極上でペロブスカイトPZTを形成しP-E履歴曲線から強誘電性を確認する事に成功した。 MFISFET型メモリでは、絶緑体層としてMgOバッファ層を用いてSi基板上でPZT薄膜の作製を試みた。その結果、5nm程度の薄いMgOバッファ層上で高配向したペロブスカイトPZTを得ることができた。また、P-E履歴曲線の測定で強誘電性を確認した。しかし、C-V特性では良好なメモリ特性が得られず、MgO/Si界面の劣化が示唆された。","subitem_description_type":"Abstract"},{"subitem_description":"For metal/ferroelectrics/metal (MFM) memory, ferroelectric lead-zirconate-titanate (Pb (Zr_<0.52>Ti_<0.48>) O_3 : PZT) thin-film capacitors were fabricated by ArF pulsed laser ablation (PLA) using Ni-alloy electrodes on oxidized (100) silicon. The fatigue test revealed that the increase in the frequency both for acceleration and measurement of switching pulse increases the life of polarization reversal while it decreases the switched charge density Q_<SW>. At 50 kHz, Q_W keeps the initial value even after switching above 10^<10> cycles. The measurement frequency dependence of Q_<SW> suggests that a homogeneous fatigue takes place irrespective of fast and slow domains and additional layrs of a low dielectric constant are probably formed in the ferroelectric-metal interface.\nThe effect of various electrodes on the ferroelectric properties of PZT films through the film structure is also presented. These experiments revealed that there is no simple correlation between the film structure and the fatigue resistance. The fatigue resistance is, however, found to be improved primarily by decreasing Q_<SW>, although the correlation shows some ambiguity. For examining the fatigue properties, titanium-aluminum-nitride (Ti-Al-N ; TAN) electrode films were proposed for PZT thin-film capacitors. Capacitors with rather randomly oriented PZT films on the TAN/(100) Si did not show a ferroelectric hysteresis loop, but the capacitor with preferentially [100] -oriented PZT film on the TAN/(100) MgO did. This suggests that a TAN-electrode film was grown on (100) MgO with a high oxidation resistance at the high temperature employed for ferroelectric oxide preparation.\nFor metal ferroelectrics/insulator/semiconductors-(MFIS-) FET memory, PZT/MgO/(100) Si structure was proposed. The PZT film obtained was found to be highly oriented perovskite PZT film with a ferroelectric P-E hysteresis.","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:06650010, 研究期間(年度):1994–1995","subitem_description_type":"Other"},{"subitem_description":"出典：「レーザアブレーション法による強誘電体不揮発メモリにおける疲労特性の改善」研究成果報告書　課題番号06650010\n(KAKEN：科学研究費助成事業データベース（国立情報学研究所）)\n　　　本文データは著者版報告書より作成","subitem_description_type":"Other"}]},"item_9_publisher_17":{"attribute_name":"公開者","attribute_value_mlt":[{"subitem_publisher":"金沢大学工学部"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=60143880","subitem_relation_type_select":"URI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06650010/","subitem_relation_type_select":"URI"}},{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-06650010/066500101995kenkyu_seika_hokoku_gaiyo/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-10-05"}],"displaytype":"detail","filename":"TE-PR-MORIMOTO-A-kaken 1996-9p.pdf","filesize":[{"value":"284.7 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-MORIMOTO-A-kaken 1996-9p.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/34900/files/TE-PR-MORIMOTO-A-kaken 1996-9p.pdf"},"version_id":"0550b4cd-87a1-4daf-909a-929e3ef9879c"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"レーザアブレーション法による強誘電体不揮発メモリにおける疲労特性の改善","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"レーザアブレーション法による強誘電体不揮発メモリにおける疲労特性の改善"},{"subitem_title":"Improvement of fatigue properties in ferroelectric nonvolatile memory prepared by pulsed laser ablation","subitem_title_language":"en"}]},"item_type_id":"9","owner":"3","path":["2838"],"pubdate":{"attribute_name":"公開日","attribute_value":"2017-10-05"},"publish_date":"2017-10-05","publish_status":"0","recid":"34900","relation_version_is_last":true,"title":["レーザアブレーション法による強誘電体不揮発メモリにおける疲労特性の改善"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-07-27T14:54:04.151543+00:00"}