{"created":"2023-07-27T06:52:06.624814+00:00","id":45850,"links":{},"metadata":{"_buckets":{"deposit":"d662033d-294d-42de-b774-7b5ce7f9da25"},"_deposit":{"created_by":18,"id":"45850","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"45850"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00045850","sets":["2812:2813:2823"]},"author_link":["79673","79672"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-05-20","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"4p.","bibliographicVolumeNumber":"2009-2010","bibliographic_titles":[{"bibliographic_title":"平成22(2010)年度 科学研究費補助金 若手研究(B) 研究成果報告書"},{"bibliographic_title":"2010 Fiscal Year Final Research Report","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{}],"nameIdentifiers":[{},{}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"極限環境動作を目指した新規強誘電体不揮発性メモリデバイスの実現を目指し、ワイドギャップ半導体ダイヤモンド上に高キュリー温度非鉛強誘電体BiFeO3(BFO)を堆積した積層構造の作製と特性評価を行った。ボロン添加した導電性ダイヤモンド層上にBFOが結晶化可能である事および良好な強誘電性を示す事が確認された。また、同構造試料の高温特性を検証したところ、最大200℃まで安定的に動作可能である事が確認された。\n以上の結果より、本研究課題が掲げるBFO/ダイヤモンド積層構造を用いた極限環境動作型強誘電体メモリデバイスの実現に向けて、当該構造の形成プロセスの確立および今後の展開に対する有用性が立証されたものと言える。","subitem_description_type":"Abstract"},{"subitem_description":"As an integration of Pb-free ferroelectrics with wide-gap semiconductors, (Pr, Mn)-codoped BiFeO_3 (BPFM)/B-doped diamond layered structure was fabricated on a diamond substrate. B-doped diamond films were homoepitaxially grown on diamond substrate using microwave plasma-enhanced chemical vapor deposition. Then, BPFM thin films were deposited on the B-doped diamond layer by pulsed laser deposition. BPFM thin films were polycrystalline with random orientations on the B-doped diamond layer. Fabricated heterostructure showed saturated P-E hysteresis curves with 2P_r : 90℃/cm^2 and 2E_c : 740kV/cm for maximum electric field of 900kV/cm at room temperature. P-E hysteresis curves without influences of leakage current were observed even when the measurement temperature was increased to 200 ℃.","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:21760233, 研究期間(年度):2009-2010","subitem_description_type":"Other"},{"subitem_description":"出典：研究課題「極限環境動作を目指した強誘電体不揮発性メモリデバイスの開発」課題番号21760233\n（KAKEN：科学研究費助成事業データベース（国立情報学研究所）） \n（https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-21760233/21760233seika/）を加工して作成","subitem_description_type":"Other"}]},"item_9_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学理工研究域電子情報通信学系","subitem_description_type":"Other"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00052184","subitem_identifier_reg_type":"JaLC"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/search/?qm=30401897"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=30401897","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21760233/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21760233/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-21760233/21760233seika/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-21760233/21760233seika/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-09-28"}],"displaytype":"detail","filename":"TE-PR-KAWAE-T-kaken 2011-4p.pdf","filesize":[{"value":"412.1 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-KAWAE-T-kaken 2011-4p.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/45850/files/TE-PR-KAWAE-T-kaken 2011-4p.pdf"},"version_id":"fb27d5f7-90fb-4778-a171-ae3469ab84db"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"極限環境動作を目指した強誘電体不揮発性メモリデバイスの開発","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"極限環境動作を目指した強誘電体不揮発性メモリデバイスの開発"},{"subitem_title":"Development of advanced ferroelectric random access memory devices in more extensive region","subitem_title_language":"en"}]},"item_type_id":"9","owner":"18","path":["2823"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-10-01"},"publish_date":"2018-10-01","publish_status":"0","recid":"45850","relation_version_is_last":true,"title":["極限環境動作を目指した強誘電体不揮発性メモリデバイスの開発"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-07-27T13:19:51.685898+00:00"}