{"created":"2023-07-27T06:52:06.669700+00:00","id":45851,"links":{},"metadata":{"_buckets":{"deposit":"0135fe58-e07c-492d-a8b2-928e2acc4fd9"},"_deposit":{"created_by":18,"id":"45851","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"45851"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00045851","sets":["2812:2813:2825"]},"author_link":["79673","79672"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2009-05-20","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"4p.","bibliographicVolumeNumber":"2007-2008","bibliographic_titles":[{"bibliographic_title":"平成20(2008)年度 科学研究費補助金 若手研究(B) 研究成果報告書"},{"bibliographic_title":"2008 Fiscal Year Final Research Report","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kawae, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"79673","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"30401897","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=30401897"}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"ダイヤモンド超伝導体ジョセフソン接合の作製を目指し、高濃度ボロン添加ダイヤモンド薄膜の作製および微細加工プロセスの確立を試みた。\nマイクロ波プラズマCVD法を用いた高濃度ボロン添加ダイヤモンド薄膜作製に関して、Si(111)およびダイヤモンド(111)基板上に超伝導転移温度4〜6Kの超伝導ダイヤモンド薄膜の作製を実現した。特にSi(111)基板上でのダイヤモンド超伝導体薄膜のヘテロエピ成長は世界的にも初めての成功例であり、当該材料を用いた今後のデバイス応用を検討する上で有用な成果と言える。また、デバイス作製に向けたダイヤモンド薄膜の微細加工としてO_2プラズマRIEを用いたダイヤモンド基板上の段差加工およびホモエピ成長したダイヤモンド超伝導体薄膜のエッチングを試み、段差基板上にウィークリン型接合形成を実現した。\n上記の各種プロセスにより作製された接合試料の基礎特性を評価した結果、観測温度2Kにおいてジョセフソン接合的な振る舞いを確認した。今後は試料の超伝導転移温度の更なる向上と微小接合を用いたトンネル分光による詳細な各種接合特性の評価が求められる。\n以上の結果より、本研究課題が掲げるダイヤモンド超伝導体ジョセフソン接合実現に向けたダイヤモンド超伝導薄膜作製および接合作製用微細加工プロセスの基礎がほぼ確立されたものと言える。","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:19760213, 研究期間(年度):2007-2008","subitem_description_type":"Other"},{"subitem_description":"出典：「高濃度ボロン添加ダイヤモンド超伝導体薄膜を用いたジョセフソンデバイスの開発」研究成果報告書　課題番号19760213\n（KAKEN：科学研究費助成事業データベース（国立情報学研究所））\n（https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-19760213/19760213seika/)を加工して作成","subitem_description_type":"Other"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00052185","subitem_identifier_reg_type":"JaLC"}]},"item_9_publisher_17":{"attribute_name":"公開者","attribute_value_mlt":[{"subitem_publisher":"金沢大学理工研究域電子情報通信学系"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/search/?qm=30401897"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=30401897","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19760213/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19760213/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-19760213/19760213seika/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-19760213/19760213seika/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"川江, 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