{"created":"2023-07-27T06:52:31.043882+00:00","id":46489,"links":{},"metadata":{"_buckets":{"deposit":"9a65c60d-00a5-476c-84e2-8272da9b7ad4"},"_deposit":{"created_by":18,"id":"46489","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"46489"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00046489","sets":["2812:2813:2817"]},"author_link":["2417","80520"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2017-05-09","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"5p.","bibliographicVolumeNumber":"2014-04-01 - 2017-03-31","bibliographic_titles":[{"bibliographic_title":"平成28(2016)年度 科学研究費補助金 挑戦的萌芽研究 研究成果報告書"},{"bibliographic_title":"2016 Fiscal Year Final Research Report","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{}],"nameIdentifiers":[{},{}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"本研究は、超省エネ化に資する次世代ダイヤモンドパワーデバイス実現のために必要なダイヤモンドウェハの大面積（２インチ以上）・低コスト化に関する基盤技術の開発を目的とした。その結果、ダイヤモンドヘテロエピタキシャル成長用基板としてNiの有効性を示した。具体的には、多結晶Ni基板上に多結晶ダイヤモンド膜を成長することに成功し、かつダイヤモンド/Ni界面に析出したグラファイトにより、そのダイヤモンド膜は自然剥離により自立化可能であることを示した。","subitem_description_type":"Abstract"},{"subitem_description":"The purpose of this study has been to develop the fundamental technologies about a large-area and low-cost fabrication of diamond wafers for the realization of next-generation diamond power devises. We report that freestanding diamond films were fabricated by a new self-separation method. Thick poly-crystalline diamond films were grown on poly-crystalline Ni substrates by microwave plasma-enhanced chemical vapor deposition after the substrates were saturated with carbon via a saturation process using a carbon solid solution. This saturation process suppressed the erosion of diamond nuclei on the Ni substrates. During the cooling process after diamond growth, the carbon atoms dissolved in the Ni substrates became supersaturated and precipitated as graphite interlayers at the diamond films/Ni interfaces. The graphite interlayers caused the thick diamond films to spontaneously separate from the Ni substrates without cracking, allowing the Ni substrates to be reused.","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:26600096, 研究期間(年度):2014-04-01 - 2017-03-31","subitem_description_type":"Other"},{"subitem_description":"出典：「インチスケールダイヤモンドウェハ開発のための基盤研究」研究成果報告書　課題番号26600096\n（KAKEN：科学研究費助成事業データベース（国立情報学研究所）） \n（https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-26600096/26600096seika/）を加工して作成","subitem_description_type":"Other"}]},"item_9_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学ナノマテリアル研究所","subitem_description_type":"Other"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00052821","subitem_identifier_reg_type":"JaLC"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/search/?qm=80462860"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=80462860","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-26600096/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-26600096/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-26600096/26600096seika/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-26600096/26600096seika/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-11-19"}],"displaytype":"detail","filename":"TE-PR-TOKUDA-N-kaken 2017-5p.pdf","filesize":[{"value":"996.8 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-TOKUDA-N-kaken 2017-5p.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/46489/files/TE-PR-TOKUDA-N-kaken 2017-5p.pdf"},"version_id":"b9ccd520-a8b5-4d73-993f-acb08d9cc530"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"インチスケールダイヤモンドウェハ開発のための基盤研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"インチスケールダイヤモンドウェハ開発のための基盤研究"},{"subitem_title":"Basic study for development of inch-scale diamond wafers","subitem_title_language":"en"}]},"item_type_id":"9","owner":"18","path":["2817"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-11-19"},"publish_date":"2018-11-19","publish_status":"0","recid":"46489","relation_version_is_last":true,"title":["インチスケールダイヤモンドウェハ開発のための基盤研究"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-07-27T11:08:28.238698+00:00"}