{"created":"2023-07-27T06:52:31.088388+00:00","id":46490,"links":{},"metadata":{"_buckets":{"deposit":"0f90e71c-af96-41c5-a245-6d43bc4ecb11"},"_deposit":{"created_by":18,"id":"46490","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"46490"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00046490","sets":["2812:2813:2819"]},"author_link":["2417","80520"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2015-06-09","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"5p.","bibliographicVolumeNumber":"2012-04-01 - 2015-03-31","bibliographic_titles":[{"bibliographic_title":"平成26(2014)年度 科学研究費補助金 若手研究(A) 研究成果報告書"},{"bibliographic_title":"2014 Fiscal Year Final Research Report","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{}],"nameIdentifiers":[{},{}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"ダイヤモンドは、次世代パワーデバイス材料として最も高い省エネ効果が期待されている半導体材料である。本研究は、その材料・プロセス技術の高度化を行うことで、超省エネ化実現のための革新的デバイス特性を創出することを目的とした。本研究で、高品質なp型ダイヤモンド膜の成長技術の開発、超低抵抗率のδドープダイヤモンドの実現、そして、高品質なAl2O3/ダイヤモンド界面を有するダイヤモンドMOS構造の作製に成功した。","subitem_description_type":"Abstract"},{"subitem_description":"Diamond is a semiconductor material for the next-generation power devices. The purpose of this study was to create the novel device performances for the realization of ultra-energy saving by elevating its material and process techniques. In this study, we succeeded in the development of the growth techniques of high-quality p-type diamond films, the realization of delta-doped diamond with ultralow resistivity, and the fabrication of diamond MOS structures with high-quality Al2O3/diamond interfaces.","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:24686074, 研究期間(年度):2012-04-01 - 2015-03-31","subitem_description_type":"Other"},{"subitem_description":"出典：研究課題「超低損失ダイヤモンドパワーデバイス開発のための基盤研究」課題番号24686074\n（KAKEN：科学研究費助成事業データベース（国立情報学研究所）） \n（https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-24686074/24686074seika/)を加工して作成","subitem_description_type":"Other"}]},"item_9_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学ナノマテリアル研究所","subitem_description_type":"Other"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00052822","subitem_identifier_reg_type":"JaLC"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/search/?qm=80462860"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=80462860","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-24686074/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-24686074/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-24686074/24686074seika/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-24686074/24686074seika/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-11-19"}],"displaytype":"detail","filename":"TE-PR-TOKUDA-N-kaken 2015-5p.pdf","filesize":[{"value":"585.0 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-TOKUDA-N-kaken 2015-5p.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/46490/files/TE-PR-TOKUDA-N-kaken 2015-5p.pdf"},"version_id":"b321fd69-d776-4f8e-b993-9b3ccd937700"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"超低損失ダイヤモンドパワーデバイス開発のための基盤研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"超低損失ダイヤモンドパワーデバイス開発のための基盤研究"},{"subitem_title":"Basic study for development of ultra-low loss diamond power devices","subitem_title_language":"en"}]},"item_type_id":"9","owner":"18","path":["2819"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-11-19"},"publish_date":"2018-11-19","publish_status":"0","recid":"46490","relation_version_is_last":true,"title":["超低損失ダイヤモンドパワーデバイス開発のための基盤研究"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-07-27T09:41:23.112220+00:00"}