{"created":"2023-07-27T06:53:07.514803+00:00","id":47432,"links":{},"metadata":{"_buckets":{"deposit":"d30edbc2-a990-4f57-bc77-9b15fb501dea"},"_deposit":{"created_by":18,"id":"47432","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"47432"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00047432","sets":["2812:2813:2837"]},"author_link":["161","84036"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1997-03","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"7p.","bibliographicVolumeNumber":"1995-1996","bibliographic_titles":[{"bibliographic_title":"平成8(1996)年度 科学研究費補助金 基盤研究(C) 研究成果報告書"},{"bibliographic_title":"1996 Fiscal Year Final Research Report","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{}],"nameIdentifiers":[{},{}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"トランジスタのエミッタに、ベースよりバンドギャップの広い材料を用いることにより、従来のトランジスタに比べベースの不純物濃度を高く設定でき、ベース抵抗を低減できる。これにより、素子の動作速度を高めることができる。このエミッタ材料として、非晶質SiCと微結晶Siを提案し、実際にこれらを組み合わせてトランジスタを試作した。まず、微結晶Siのみを用いると結晶成長が生じ、バンドギャップ差を作り出すことができず、低い電流増幅率しか得られなかった。そこで、まずSiC超薄膜を形成し、その上に微結晶Siを堆積したところ、従来の20〜30倍も大きい電流増幅率を持つものができた。しかし、エミッタ抵抗が大きく、高周波測定をしたところ、それによる遅延が比較的大きいことが判明した。このトランジスタの本質的な性能を発揮させるには、エミッタ抵抗を削減しなければならない。\n次に、ベースのバンドギャップをエミッタのそれより狭くして、バンドギャップ差を作ることを検討した。Siよりバンドギャップの狭い材料としてSiGeを選択し、SiとGeをイオンビームでスパッタすることによりそれを作製した。SiにGeが加わるとエピタキシャル温度が低下し、Si_<0.75>Ge_<0.25>では400℃程度の低温でもエピタキシャル成長が可能であることが分かった。\nさらにECR(電子サイクロトロン共鳴)法を用いて水素プラズマを励起し、それにSiH_4ガスを接触分解させ、Siのエピタキシャル成長を行った。この水素プラズマは、SiH_4ガスの分解だけでなく、堆積したSi膜の一部をエッチングしていることおよびその作用がエピタキシャル成長を促進していることや過度のエッチングは結晶欠陥を引き起こすことが明らかになった。一方、適当な堆積条件を設定すれば、SiO_2基板上にはSi膜は成長せず、Si基板のみにSiのエピタキシャル成長を起こすことができる、いわゆる選択エピタキシャル成長が可能であることが見いだされた。","subitem_description_type":"Abstract"},{"subitem_description":"It is possible to reduce the base resistance by introducing wider energy bandgap emitter than a base region. This can make operation speed of bipolar transistor faster. We proposed amorphous SiC (a-SiC) and microcrystalline Si (mu c-Si) for the emitter material and fabricated prototype devices using those. For only using mu c-Si the device showed low current gain because of epitaxial growth which forms the Si homojunction. Whereas, we fabricated devices with a a-SiC ultra-thin film before deposition of a mu c-Si film, resulting in 20-30 times larger current gain than that of the mu c-Si device. However emitter resistance of the a-SiC device increased, which degraded high frequency performance.\nNextly, we attempted to fabricate devices having SiGe base as a narrow bandgap base. SiGe films were formed by sputtering Si and Ge targets using an Ar ion beam. Epitaxial temperature went down by adding Ge. For example, the epitaxial temperature was as low as 400ﾟC for composition of Si_<.75>Ge_<.25>.\nFurthermore, we investigated low temperature Si epitaxial growth by ECR (Electron Cycrotron Resonance) plasma CVD method. In the film growth process, not only deposition process but also etching process was found to proceed. The later process was found to be effective for enhancing epitaxial growth. Moreover, selective epitaxial growth was successfully carried out by controlling the deposition conditions.","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:07650394, 研究期間(年度):1995-1996","subitem_description_type":"Other"},{"subitem_description":"出典：「炭化シリコン超薄膜を正孔障壁層に用いる新しいエミッタ構造の研究」研究成果報告書　課題番号07650394\n  (KAKEN：科学研究費助成事業データベース（国立情報学研究所）)\n　　　本文データは著者版報告書より作成","subitem_description_type":"Other"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00053759","subitem_identifier_reg_type":"JaLC"}]},"item_9_publisher_17":{"attribute_name":"公開者","attribute_value_mlt":[{"subitem_publisher":"金沢大学理工研究域電子情報通信学系"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/search/?qm=40162359"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=40162359","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650394/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650394/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-07650394/076503941996kenkyu_seika_hokoku_gaiyo/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-07650394/076503941996kenkyu_seika_hokoku_gaiyo/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-03-15"}],"displaytype":"detail","filename":"TE-PR-SASAKI-K-kaken 1997-7p.pdf","filesize":[{"value":"130.3 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-SASAKI-K-kaken 1997-7p.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/47432/files/TE-PR-SASAKI-K-kaken 1997-7p.pdf"},"version_id":"dc17e632-3139-4c18-b567-10b9becfa9fc"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"炭化シリコン超薄膜を正孔障壁層に用いる新しいエミッタ構造の研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"炭化シリコン超薄膜を正孔障壁層に用いる新しいエミッタ構造の研究"},{"subitem_title":"Study on New Emitter Structure Using Ultra-Thin Silicon Carbide Films as Hole Blocking Layr","subitem_title_language":"en"}]},"item_type_id":"9","owner":"18","path":["2837"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-03-15"},"publish_date":"2019-03-15","publish_status":"0","recid":"47432","relation_version_is_last":true,"title":["炭化シリコン超薄膜を正孔障壁層に用いる新しいエミッタ構造の研究"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-07-27T14:53:24.228869+00:00"}