{"created":"2023-07-27T06:53:08.412240+00:00","id":47455,"links":{},"metadata":{"_buckets":{"deposit":"efcb1415-eb50-4719-ba94-b65e7565da2e"},"_deposit":{"created_by":18,"id":"47455","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"47455"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00047455","sets":["2812:2813:2827"]},"author_link":["13046","2109"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-03","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"50p.","bibliographicVolumeNumber":"2005-2006","bibliographic_titles":[{"bibliographic_title":"平成18(2006)年度 科学研究費補助金 基盤研究(C) 研究成果報告書"},{"bibliographic_title":"2006 Fiscal Year Final Research Report","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{}],"nameIdentifiers":[{},{}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Si光導波路は通常、クラッドとなる部分のSiをエッチングすることにより作製されるが、エッチング壁面の荒れにより光導波路の伝搬損失が比較的大きくなっている。\n本研究は、クラッドとなる部分のSiのみを選択的に酸化してSi光導波路を作製することを目的とする。すなわち、コアとなるSiの上部に選択酸化用マスク(シリコン窒化膜を利用)を形成して酸化を行う。このとき、酸化は深さ方向だけでなく横方向にも進行するので、コアとクラッドの境界が滑らかになり、伝搬損失の低減が期待できる。\nシリコン窒化膜厚40nm、1100℃、7時間のウェット酸化条件において、シリコン窒化膜は酸化されてSiO_2に変換されるとともにSi表面が若干酸化されたが、Si光導波路形成に十分な酸化防止性能があることがわかった。\n選択酸化マスク幅を3μmとして、Si光導波路の作製を行った。シリコン窒化膜のエッチングについて検討した結果、希フッ酸によるウェットエッチングではパターニングが困難であったので、フロンガスによるドライエッチングを行った。断面の顕微鏡観察により、酸化によりシリコン窒化膜下部のSiは酸化されず、シリコン窒化膜がない部分のSiが酸化されてSiコアが形成されることを確認した。作製したSi光導波路の伝搬損失は6.3dB/cm、結合損失は29.8dBであった。同時に作製した従来法によるSi光導波路は、伝搬損失10.3dB/cm、結合損失27.0dBであり、本方法により伝搬損失が低減できることを実証した。結合損失は増加したが、これは、Si上部が酸化されたことによるコア厚減少によるものと考えている。\n本研究で作製したSi光導波路は多モードであるので、今後は単一モードのSi光導波路の作製が必要である。","subitem_description_type":"Abstract"},{"subitem_description":"We propose and demonstrate a fabrication process of Si photonic wire waveguides by selective oxidation of Si. In the proposed method, an optical waveguide pattern is delineated using a Si_3N_4 film on a SOI wafer, and the SOI wafer is thermally oxidized. The Si under the Si_3N_4 film is not oxidized and works as a core, and the Si without the Si_3N_4 film is oxidized and works as a clad. The roughness at the core/clad interface is smoothed while the oxidation process because of isotropic nature of thermal oxidation, and then the propagation loss is reduced.\nWhen a 40 nm-thick Si_3N_4 film is used, the Si_3N_4 film is converted to SiO_2 and a portion of the Si layer is also oxidized after 7 hours wet oxidation at 1100℃. Although the Si is slightly oxidized, the thickness of the remaining Si layer is sufficient to fabricate Si photonic wire waveguides, and then the Si_3N_4 film can be used as an oxidation-resistant film.\nA Si photonic wire waveguide is fabricated by using a 3 μm-wide Si_3N_4 film. Selective oxidation is clearly observed from the cross-sectional microscope image and the scanning microscope image. The propagation loss and the coupling loss of the fabricated waveguide are 6.3 dB/cm and 29.8 dB, respectively. As compared to the Si photonic wire waveguide fabricated by dry etching process, the propagation loss is decreased by 4 dB and the coupling loss is increased by 3 dB, and therefore the proposed method is useful to reduce propagation loss of the Si photonic wire waveguide. The increase of the coupling loss is attributed to reduced thickness of the Si layer during the oxidation process.","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:17560032, 研究期間(年度):2005-2006","subitem_description_type":"Other"},{"subitem_description":"出典：「シリコンの選択酸化による細線光導波路の作製に関する研究」研究成果報告書　課題番号17560032\n  (KAKEN：科学研究費助成事業データベース（国立情報学研究所）)\n　　　本文データは著者版報告書より作成","subitem_description_type":"Other"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00053782","subitem_identifier_reg_type":"JaLC"}]},"item_9_publisher_17":{"attribute_name":"公開者","attribute_value_mlt":[{"subitem_publisher":"金沢大学理工研究域フロンティア工学系"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/search/?qm=90202837"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=90202837","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17560032/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17560032/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-17560032/175600322006kenkyu_seika_hokoku_gaiyo/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-17560032/175600322006kenkyu_seika_hokoku_gaiyo/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-03-15"}],"displaytype":"detail","filename":"TE-PR-IIYAMA-K-kaken 2007-50p.pdf","filesize":[{"value":"11.1 MB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-IIYAMA-K-kaken 2007-50p.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/47455/files/TE-PR-IIYAMA-K-kaken 2007-50p.pdf"},"version_id":"72acc64a-ffa0-4021-8f37-524345a227e7"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"シリコンの選択酸化による細線光導波路の作製に関する研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"シリコンの選択酸化による細線光導波路の作製に関する研究"},{"subitem_title":"Fabrication of Si photonic wire waveguide by utilizing selective oxidation of Si","subitem_title_language":"en"}]},"item_type_id":"9","owner":"18","path":["2827"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-03-15"},"publish_date":"2019-03-15","publish_status":"0","recid":"47455","relation_version_is_last":true,"title":["シリコンの選択酸化による細線光導波路の作製に関する研究"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-07-27T14:33:51.802328+00:00"}