{"created":"2023-07-27T06:53:08.548426+00:00","id":47459,"links":{},"metadata":{"_buckets":{"deposit":"e7886924-393c-4c7c-a195-904801e87c71"},"_deposit":{"created_by":18,"id":"47459","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"47459"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00047459","sets":["2812:2813:2833"]},"author_link":["71379","84063"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-03","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"26p.","bibliographicVolumeNumber":"1999-2000","bibliographic_titles":[{"bibliographic_title":"平成12(2000)年度 科学研究費補助金 基盤研究(C) 研究成果報告書"},{"bibliographic_title":"2000 Fiscal Year Final Research Report","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{}],"nameIdentifiers":[{},{}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":" Siナノ結晶(nc-Si)をSi酸化物中に分散生成したnc-Si分散薄膜は,光励起により高効率の可視発光を呈する新しい発光材料であるが,電気伝導度が小さく電流注入による発光の実現が困難である。本研究では,発光効率の高い高抵抗層とSi-richな低抵抗層を多層化することにより,高効率発光と伝導度の向上を同時に実現することを目指した。\n多層構造の形成は,プラズマCVD法によるSiO_x堆積中にO_2供給量を変化させ組成に変調を与えることにより実現した。熱処理後に形成されるナノ結晶のサイズは組成に依存するため,結果として平均結晶サイズにも周期的な空間変調が与えられる。多層化により電気伝導度の向上は確認されたが,積層周期を100nm程度まで小さくしなければ多層化の効果は現れなかった。このため,昨年度の研究成果であるブラッグリフレクタ(300nm周期)による発光スペクトルの先鋭化との同時実現が課題として残った。","subitem_description_type":"Abstract"},{"subitem_description":"Nanocrystalline (nc-) Si-dispersed films, which are the silicon oxide thin films including nc-Si dispersively, are a new light-emitting material providing high efficiency visible photolminescence. However, the nc-Si-dispersed films generally have low electrical conductivity, and thus there are difficulties in achievement of light emission by current injection. In this project, we aimed to achieve both high efficiency light emission and high conductivity simultaneously by the formation of periodical multilayers with high-efficiency light-emitting layers and low-resistivity Si-rich layers.\nThe formation of the multilayer structure was realized by modulating oxygen content of the films through a variation of O_2 flow rate. As a result, a spacially periodical modulation of the average size of nc-Si was bought about after high-temperature thermal annealing because the size of nc-Si formed depends on the composition of the films. An increase of the conductivity due to the multilayer structure was confirmed but the effect of multilayer structure observed only for the multilayer that has a period less than 100nm. That was not compatible to the period 〜300 nm of distributed Bragg reflector for 800-nm wavelength region, which is the peak wavelength of photoluminescence. This incompatibility must be solves in future.","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:11650319, 研究期間(年度):1999-2000","subitem_description_type":"Other"},{"subitem_description":"出典：「周期的構造変調層を形成したSiナノ結晶分散薄膜の電気的・光学的性質」研究成果報告書　課題番号11650319\n  (KAKEN：科学研究費助成事業データベース（国立情報学研究所）)\n　　　本文データは著者版報告書より作成","subitem_description_type":"Other"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00053786","subitem_identifier_reg_type":"JaLC"}]},"item_9_publisher_17":{"attribute_name":"公開者","attribute_value_mlt":[{"subitem_publisher":"金沢大学理工研究域電子情報通信学系"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/search/?qm=50221784"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=50221784","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650319/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650319/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-11650319/116503192000kenkyu_seika_hokoku_gaiyo/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-11650319/116503192000kenkyu_seika_hokoku_gaiyo/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-03-15"}],"displaytype":"detail","filename":"TE-PR-INOKUMA-T-kaken 2001-26p.pdf","filesize":[{"value":"963.0 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-INOKUMA-T-kaken 2001-26p.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/47459/files/TE-PR-INOKUMA-T-kaken 2001-26p.pdf"},"version_id":"bf9ddf94-de61-470a-bed0-cd6bd9fcb5b3"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"周期的構造変調層を形成したSiナノ結晶分散薄膜の電気的・光学的性質","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"周期的構造変調層を形成したSiナノ結晶分散薄膜の電気的・光学的性質"},{"subitem_title":"\"Electrical and Optical Properties of Nanocrystalline-Si-Dispersed Film with Periodical Modulation of Its Layer Structure\"","subitem_title_language":"en"}]},"item_type_id":"9","owner":"18","path":["2833"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-03-15"},"publish_date":"2019-03-15","publish_status":"0","recid":"47459","relation_version_is_last":true,"title":["周期的構造変調層を形成したSiナノ結晶分散薄膜の電気的・光学的性質"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-07-27T14:46:42.994483+00:00"}