{"created":"2023-07-27T06:53:15.704561+00:00","id":47648,"links":{},"metadata":{"_buckets":{"deposit":"773e64ad-cfff-45f7-9238-11a6e01a5404"},"_deposit":{"created_by":18,"id":"47648","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"47648"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00047648","sets":["2812:2813:2834"]},"author_link":["84989","84988"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-03","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"5p.","bibliographicVolumeNumber":"1998-1999","bibliographic_titles":[{"bibliographic_title":"平成11(1999)年度 科学研究費補助金 基盤研究(C) 研究成果報告書"},{"bibliographic_title":"1999 Fiscal Year Final Research Report","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{}],"nameIdentifiers":[{},{}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"1.半導体面型光変調器の開発:GaAs材料系とInP材料系の面型変調器の試作を行った。\n1-1)GaAs系アレー面型変調器の試作:p^+n^-n^+:GaAs基本構造を20対積層した面型変調画素を100個程度2次元的に集積した光透過型の面型アレー光変調器を試作した。画素の性能としては7.5Vの電圧変化で約10dBの消光比、挿入損は5dB、動作速度は1.5MHzであった。また、いくつかの画素に電圧を加えることで変調器から出射した光の映像は文字として認識できることが確認できた。\n1-2)InP系面型変調画素試作の試み:1μm帯で動作するInGaAsP材料系の面型変調画素の試作も試みた。InP結晶を用いた埋め込み再成長時にInGaAs多層膜を溶かしてしまうメルトバック減少が問題となり面型変調素子を実際に作製するまでには至らなかったが、素子試作に向けての多層膜結晶成長、プロセス、加工などの基礎技術を確立することができた。\n2.量子閉込構造を利用した素子設計:より低い駆動電圧で、高い消光比を実現するため、多重量子井戸(MQW)構造を利用した透過型でかつ面型の光変調器の設計を行った。材料系としては、0.8μm帯で動作するGaAs/AlGaAs:MQWと1.55μm帯で動作するInGaAs/InP:MQWの2つの材料系について検討した。高性能化には、MQW中の不純物濃度を1×10^<15>cm^<-3>以下にすること、井戸厚の揺らぎの標準偏差値を0.2nm以下にすることが重要であることがわかった。最適化したGaAs/AlGaAs:MQWではバルク結晶の3倍消光比を大きくでき(InGaAs/InP系では2倍)、5Vの電圧変化で消光比20dB、挿入損2dB、動作速度数GHzの性能を有する素子構造が設計できた。","subitem_description_type":"Abstract"},{"subitem_description":"1. Development of planar-illuminated semiconductor optical modulators\n1-1)Fabrication of a planar-illuminated-type array optical modulator with GaAs system :\nFabrication of an array optical modulator into which 10 × 10 elements were integrated monolithically has been achieved. Each element of the array has been made as a planar-illuminated optical modulator composed of 20 sets of p^+n^-n^+:GaAs crystal layers. Perfarmance of 10dB extinction ratio for 7.5V variation of the applied voltage is obtained. The insertion loss is 5dB and the oprating speed is 1.5MHz. A capital letter 'K' was displayed as an application of the array optical modulator.\n1-2) Trial to make a planar-illuminated-type optical modulator element with InGaAsP system :\nWe tried to fabricate a planar-illuminated optical modulator element made of InGaAsP material system. In reality, a planar-illuminated optical modulator element could not be fabricated because of a meltback problem that InGaAs multi-layers dissolve in the solution when re-growth layer of InP is buried. However, fundamental technologies of InGaAs multi-layers crystal growth and fabrication processes so on have been established to make a planar-illuminated-type optical modulator element.\n2. Deign of a planar-illuminated-type semiconductor optical modulator with multi-quantum well structures\nA planar-illuminated-type semiconductor optical modulator using multi-quantum well structure has been designed in form of tranmision type. To realize low oprating voltage, high extinction ratio and low insertion loss, we proposed a structure in which voltage is applied from the transverse direction of quantum wells through p- and n- conductive layers having a comb-shape. Excellent characteristics in a well-designed device can be predicted as follows : 10〜20dB on-off extinction ratio for 5V variation of the applied voltage, insertion loss lower than 2dB and oprating speed higher than several GHz.","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:10650039, 研究期間(年度):1998-1999","subitem_description_type":"Other"},{"subitem_description":"出典：「並列情報処理用半導体光変調器の集積化」研究成果報告書　課題番号10650039\n  (KAKEN：科学研究費助成事業データベース（国立情報学研究所）)\n　　　本文データは著者版報告書より作成","subitem_description_type":"Other"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00053972","subitem_identifier_reg_type":"JaLC"}]},"item_9_publisher_17":{"attribute_name":"公開者","attribute_value_mlt":[{"subitem_publisher":"金沢大学理工研究域電子情報通信学系"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/search/?qm=10195612"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=10195612","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650039/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650039/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-10650039/106500391999kenkyu_seika_hokoku_gaiyo/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-10650039/106500391999kenkyu_seika_hokoku_gaiyo/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-05-13"}],"displaytype":"detail","filename":"TE-PR-KUWAMURA-Y-kaken 2000-5p.pdf","filesize":[{"value":"294.6 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-KUWAMURA-Y-kaken 2000-5p.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/47648/files/TE-PR-KUWAMURA-Y-kaken 2000-5p.pdf"},"version_id":"d9949935-8b03-42bd-945f-0181e9c2fa24"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"並列情報処理用半導体光変調器の集積化","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"並列情報処理用半導体光変調器の集積化"},{"subitem_title":"Integration of A Semiconductor Optical Modulator for Parallel Information","subitem_title_language":"en"}]},"item_type_id":"9","owner":"18","path":["2834"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-05-13"},"publish_date":"2019-05-13","publish_status":"0","recid":"47648","relation_version_is_last":true,"title":["並列情報処理用半導体光変調器の集積化"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-07-27T14:48:23.027912+00:00"}