{"created":"2023-07-27T06:55:09.193309+00:00","id":50873,"links":{},"metadata":{"_buckets":{"deposit":"97cb73da-9b06-48bf-8502-c2f5dfc28bee"},"_deposit":{"created_by":18,"id":"50873","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"50873"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00050873","sets":["2812:2813:2836"]},"author_link":["92049","92050"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1998-03","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"6p.","bibliographicVolumeNumber":"1996-1997","bibliographic_titles":[{"bibliographic_title":"平成9(1997)年度 科学研究費補助金 基盤研究(C) 研究成果報告書"},{"bibliographic_title":"1997 Fiscal Year Final Research Report","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{}],"nameIdentifiers":[{},{}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"1.吸収型光変調器の開発 初年度はp^+nn^+:GaAs基本構造を19対積層した面型変調器を縦6×横6個、2次元集積化した空間光変調器を試作し,「K」と言う文字画像を出力(7.5Vの駆動電圧で消光比8dB)することができた.しかしながら各素子への電気配線がないことや各素子間の電気的絶縁性が悪いなどの実用化に向けての問題点があったため、次年度は配線を含めて一体化した10行10列に2次元集積化した半導体空間光変調器の試作を行った.電気配線法として導電性透明膜を用いて配線パターンを施したガラス基板と素子を集積化した半導体基板とを張り合わせる方法を利用した.また、集積化に適した構造に素子構造を改良し、動作電圧以上の10V程度までは各素子の電気的干渉をなくして独立に各素子を動作することができ、かつ電気配線数を従来の1/2に減らすことができた.素子作製の歩留り(1/3)や素子特性(7Vの電圧変化で50%の消光)は不十分であったが、空間光変調器の作成の基盤技術を確立することができた.\n一方、理論解析では、5Vの駆動電圧で消光比10〜20dB、挿入損1〜2dBを目標として透過タイプの面型光変調器の素子構造の設計、最適化を行った.動作速度としては表面積が10×10um^2の素子で数GHzが期待できることがわかった.\n2.進行波光相互作用の基礎研究 電子ビームにより光を一方向にのみ増幅する光増幅器の実現可能性を理論的に検討した.電磁界の一部が真空領域にしみ出す構造の光導波路に光を進行させて位相速度を下げ、真空領域を進行している電子ビームがこの光を励起する.特に電子の散乱が与える影響や光波と電子波の位相整合条件などについて、密度行列の手法を用いて解析し、増幅を得るための条件や利得定数を示した.数値例としては、60Kボルトの電子加速により、5cmの相互作用で数〜数十倍の光増幅が可能であることがわかった.","subitem_description_type":"Abstract"},{"subitem_description":"1. Development of surface-illuminated optical modulators\nIn the first year, we fabricated a spatial light modulator in an integrated form of 6*6 elements two dimensional array. Each element of the array was made as a surface-illumimated optical modulators consisting 19 sets of p^+np^+ GaAs crystal layrs. A capital letter 'K' was displayd as a application of the spatial light modulator. The extinction ratio of the modulator was 8dB for 7.5V variation of an applied voltage.\nIn the next year, we developed to make the electric wiring to elements in the spatial light modulator. A wiring pattern was printed on a glass substrate. Then the glass substrate was stuck on the spatial light modulator. Detailed structure of the modulator was also improved. Amount of the wiring pattern was reduced to a half of that in the previously designed modulator. Electrical interference among the elements of the modulator was sufficiently suppressed up to the applied voltage of 10V.Although the yield of fabricate d elements was merely 1/3 and the achieved extinction ratio was not enough, that is 50% for the voltage variation of 7V,the pricipal techniqes of the fabrication was established.\nIn a theoretical analysis, the detailed structure of the surface-illuminated modulator was designed. Excellent characteristics in a well-designed device can be predicted as follows : 10dB-20dB extinction ratio for 5V variation of the applied voltage, lower insertion loss than 1dB and operating speed more than several GHz.\n2. Basic study on the interaction between the opitical traveling-wave and the electron beam\nPossibility to achieve an unidirectional optical amplifier was theoretically discussed. The phase velocity of the optical beam is slowed down, because the optical beam propagates in a dielectric wave-guide and exudes whose one part into vacuum region in form of the evanescent wave. The propagating electron beam along vacuum surface of the wave-guide excites the optical beam. Quantum mechanical analysis of the interaction between the optical beam and the electron beam is given basing on the density matrix formalism. The conditions to amplify the optical beam were analyzed. As numerical examples, possibility of several ten times optical amplification of 5cm region with 60KV excitation of the electron beam was shown.","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:08650047, 研究期間(年度):1996-1997","subitem_description_type":"Other"},{"subitem_description":"出典：「半導体空間光変調器の開発」研究成果報告書　課題番号08650047\n(KAKEN：科学研究費助成事業データベース（国立情報学研究所）)\n　　　本文データは著者版報告書より作成","subitem_description_type":"Other"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00057181","subitem_identifier_reg_type":"JaLC"}]},"item_9_publisher_17":{"attribute_name":"公開者","attribute_value_mlt":[{"subitem_publisher":"金沢大学理工研究域電子情報通信学系"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/search/?qm=80110609"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=80110609","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650047/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650047/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-08650047/086500471997kenkyu_seika_hokoku_gaiyo/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-08650047/086500471997kenkyu_seika_hokoku_gaiyo/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-03-12"}],"displaytype":"detail","filename":"TE-PR-YAMADA-M-kaken 1998-6p.pdf","filesize":[{"value":"269.5 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-YAMADA-M-kaken 1998-6p.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/50873/files/TE-PR-YAMADA-M-kaken 1998-6p.pdf"},"version_id":"a812b226-44d2-45e5-9823-db08b1775c93"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"半導体空間光変調器の開発","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"半導体空間光変調器の開発"},{"subitem_title":"Development of A Semiconductor Spatial Light Modulator","subitem_title_language":"en"}]},"item_type_id":"9","owner":"18","path":["2836"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-03-12"},"publish_date":"2020-03-12","publish_status":"0","recid":"50873","relation_version_is_last":true,"title":["半導体空間光変調器の開発"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-07-27T14:49:49.806671+00:00"}