{"created":"2023-07-27T06:55:30.703542+00:00","id":51490,"links":{},"metadata":{"_buckets":{"deposit":"2a5c3e7c-c391-4ad7-acc2-a61ccee874a0"},"_deposit":{"created_by":18,"id":"51490","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"51490"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00051490","sets":["2812:2813:4014"]},"author_link":["2940","92930"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-06-01","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"6p.","bibliographicVolumeNumber":"2019-04-01 - 2021-03-31","bibliographic_titles":[{"bibliographic_title":"令和2(2020)年度 科学研究費補助金 若手研究 研究成果報告書"},{"bibliographic_title":"2020 Fiscal Year Final Research Report","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{}],"nameIdentifiers":[{},{}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"ダイヤモンド半導体は、優れた物性を有しているが、新しい半導体であるがゆえに、デバイス応用は進んでいない。本研究では、世界に先駆けて実現した反転層チャネルMOSFETにおいて低いチャネル移動度の原因である界面準位やキャリア散乱を理解するため、ダイヤモンド中の不純物濃度や表面ラフネスがデバイス特性に与える影響を調査した。結果、MOSFETにおいては窒素の低濃度化に課題を残すものの、従来の移動度を2倍程度改善する50 cm^2/Vsを実現した。また、ホウ素ドープp型ダイヤモンド表面のラフネスを低減させることで、MOSキャパシタにおいて10^11 cm^-2eV^-1台の低い界面準位密度を達成した。","subitem_description_type":"Abstract"},{"subitem_description":"Diamond has excellent physical properties. However, the device applications have not progressed because many physics that cannot be understood remain. In this study, we investigated the effects of impurity concentration and surface roughness in diamond on device characteristics to understand the interface states and carrier scattering that cause low field-effect mobility in the inversion channel MOSFET, which was realized for the first time in the world. As a result, we have achieved 50 cm^2/Vs, which is about twice as good as the conventional mobility, although there is still an issue in reducing the nitrogen concentration in body of MOSFETs. In addition, by reducing the surface roughness of the boron-doped p-type diamond, a low interface state density of less than 10^12 cm^-2eV^-1 was achieved in the MOS capacitors.","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:19K15042, 研究期間(年度):2019-04-01 - 2021-03-31","subitem_description_type":"Other"},{"subitem_description":"出典：「窒素ドーピング技術を用いた超低損失反転層ダイヤモンドMOSFETの開発」研究成果報告書　課題番号19K15042\n（KAKEN：科学研究費助成事業データベース（国立情報学研究所）） \n（https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-19K15042/19K15042seika/）を加工して作成","subitem_description_type":"Other"}]},"item_9_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学ナノマテリアル研究所","subitem_description_type":"Other"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00057793","subitem_identifier_reg_type":"JaLC"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/search/?qm=00739568"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=00739568","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19K15042/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19K15042/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-19K15042/19K15042seika/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-19K15042/19K15042seika/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-02-10"}],"displaytype":"detail","filename":"NA-PR-MATSUMOTO-T-kaken 2021-6p.pdf","filesize":[{"value":"420.4 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"NA-PR-MATSUMOTO-T-kaken 2021-6p.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/51490/files/NA-PR-MATSUMOTO-T-kaken 2021-6p.pdf"},"version_id":"1e4120da-b53a-4a8a-b15f-a55dfa67ee1d"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"窒素ドーピング技術を用いた超低損失反転層ダイヤモンドMOSFETの開発","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"窒素ドーピング技術を用いた超低損失反転層ダイヤモンドMOSFETの開発"},{"subitem_title":"Development of low-loss inversion channel diamond MOSFET using nitrogen doping","subitem_title_language":"en"}]},"item_type_id":"9","owner":"18","path":["4014"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-02-10"},"publish_date":"2022-02-10","publish_status":"0","recid":"51490","relation_version_is_last":true,"title":["窒素ドーピング技術を用いた超低損失反転層ダイヤモンドMOSFETの開発"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-07-27T13:50:55.827819+00:00"}