{"created":"2023-07-27T06:55:32.584351+00:00","id":51568,"links":{},"metadata":{"_buckets":{"deposit":"3e57a7dd-9f4e-47a1-a84f-fe910275da81"},"_deposit":{"created_by":18,"id":"51568","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"51568"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00051568","sets":["2812:2813:3929"]},"author_link":["2417","93011"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-05-12","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"14p.","bibliographicVolumeNumber":"2017-04-01 - 2020-03-31","bibliographic_titles":[{"bibliographic_title":"令和1(2019)年度 科学研究費補助金 基盤研究(B) 研究成果報告書"},{"bibliographic_title":"2019 Fiscal Year Final Research Report","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{}],"nameIdentifiers":[{},{}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"ダイヤモンドは、様々な分野で用いられているパワーデバイスとして最も高い省エネ効果が期待されている半導体材料である。本研究で得られた主な成果は、①縦型ダイヤモンドMOSFET構造作製のための、炭素固溶反応を用いたV字及びU字トレンチ構造形成プロセスの開発、②低チャネル移動度の原因となっているAl2O3/ダイヤモンド界面における界面準位密度の定量評価、③界面準密度の低減プロセスの開発である","subitem_description_type":"Abstract"},{"subitem_description":"Diamond is a semiconductor material expected to realize the highest energy-saving effect as a power device used in various fields. In this study, we obtained the following three results: (1) development of V-shaped and U-shaped trench structure formation process using solid solution reaction of carbon for fabrication of vertical diamond MOSFET structure, (2) a quantitative evaluation of interface state density at Al2O3/diamond interfaces which cause low channel mobility in diamond MOSFETs, (3) development of a reduction process of the interface state density.","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:17H02786, 研究期間(年度):2017-04-01 - 2020-03-31","subitem_description_type":"Other"},{"subitem_description":"出典：「低損失縦型ダイヤモンドパワーMOSFET」研究成果報告書　課題番号17H02786\n（KAKEN：科学研究費助成事業データベース（国立情報学研究所））\n（https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-17H02786/17H02786seika/)を加工して作成","subitem_description_type":"Other"}]},"item_9_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学ナノマテリアル研究所","subitem_description_type":"Other"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00057871","subitem_identifier_reg_type":"JaLC"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/search/?qm=80462860"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=80462860","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17H02786/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17H02786/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-17H02786/17H02786seika/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-17H02786/17H02786seika/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-04-22"}],"displaytype":"detail","filename":"FR-PR-TOKUDA-N-kaken 2020-14p.pdf","filesize":[{"value":"281.0 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"FR-PR-TOKUDA-N-kaken 2020-14p.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/51568/files/FR-PR-TOKUDA-N-kaken 2020-14p.pdf"},"version_id":"dd2dfc9a-8e4d-498f-af6f-8836c648e88c"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"低損失縦型ダイヤモンドパワーMOSFET","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"低損失縦型ダイヤモンドパワーMOSFET"},{"subitem_title":"Low-loss vertical-type diamond power MOSFET","subitem_title_language":"en"}]},"item_type_id":"9","owner":"18","path":["3929"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-04-22"},"publish_date":"2021-04-22","publish_status":"0","recid":"51568","relation_version_is_last":true,"title":["低損失縦型ダイヤモンドパワーMOSFET"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-07-27T14:04:04.447581+00:00"}