{"created":"2023-07-27T06:55:32.631422+00:00","id":51569,"links":{},"metadata":{"_buckets":{"deposit":"83eacdb1-a7c2-4cd0-9613-65110681bd79"},"_deposit":{"created_by":18,"id":"51569","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"51569"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00051569","sets":["2812:2813:3929"]},"author_link":["93012","79672"],"item_9_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-05-26","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"7p.","bibliographicVolumeNumber":"2017-04-01 - 2020-03-31","bibliographic_titles":[{"bibliographic_title":"令和1(2019)年度 科学研究費補助金 基盤研究(B) 研究成果報告書"},{"bibliographic_title":"2019 Fiscal Year Final Research Report","bibliographic_titleLang":"en"}]}]},"item_9_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{}],"nameIdentifiers":[{},{}]}]},"item_9_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"本研究では、ワイドギャップ半導体ダイヤモンドに対し、強誘電体をゲートとした電界効果トランジスタ（FeFET）構造を形成し、従来型パワーデバイスに比する優位性について検証を行った。\n強誘電体ゲートを用いたダイヤモンドチャネルの電圧変調において、電流ON/OFF比10E+8を実証するに至った。また、強誘電体ゲートの残留分極を利用したダイヤモンドFeFETの疑似ノーマリオフ動作に関して、現在までに最長70時間に至るオフ状態の保持を実証した。\n以上の結果は、強誘電体をゲートにより実現したパワーFETの新動作原理を示したものであり、今後、当該構造を利用したパワーデバイス開発に資するものと考える。","subitem_description_type":"Abstract"},{"subitem_description":"In this study, for wide-gap semiconductor diamond, we proposed the creation of field-effect transistor structure with a ferroelectric gate (FeFET), and investigated its superiority to conventional power devices.\nWe have demonstrated a current ON/OFF ratio of 10E+8 of diamond channel due to the modulation of huge amount of carrier by applying the gate voltage. In addition, about the pseudo normally-off operation of diamond FeFET using the remnant polarization of the ferroelectric gate, it has been demonstrated that the off-state can be maintained for up to 70 hours.\nThe above results indicate the new operating principle of a power FET realized by a ferroelectric gate, and are considered to contribute to the development of power devices using this structure in the future.","subitem_description_type":"Abstract"}]},"item_9_description_22":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"研究課題/領域番号:17H03248, 研究期間(年度):2017-04-01 - 2020-03-31","subitem_description_type":"Other"},{"subitem_description":"出典：「強誘電体の巨大分極を利用した超低損失ダイヤモンドパワーFETの創出」研究成果報告書　課題番号17H03248\n（KAKEN：科学研究費助成事業データベース（国立情報学研究所））\n（https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-17H03248/17H03248seika/)を加工して作成","subitem_description_type":"Other"}]},"item_9_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学理工研究域電子情報通信学系","subitem_description_type":"Other"}]},"item_9_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00057872","subitem_identifier_reg_type":"JaLC"}]},"item_9_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/search/?qm=30401897"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/search/?qm=30401897","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17H03248/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17H03248/","subitem_relation_type_select":"URI"}},{"subitem_relation_name":[{"subitem_relation_name_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-17H03248/17H03248seika/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://kaken.nii.ac.jp/report/KAKENHI-PROJECT-17H03248/17H03248seika/","subitem_relation_type_select":"URI"}}]},"item_9_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-04-22"}],"displaytype":"detail","filename":"TE-PR-KAWAE-T-kaken 2020-7p.pdf","filesize":[{"value":"683.9 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-KAWAE-T-kaken 2020-7p.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/51569/files/TE-PR-KAWAE-T-kaken 2020-7p.pdf"},"version_id":"4dba4d47-9828-4c11-a08e-9e8dcad31627"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"research report","resourceuri":"http://purl.org/coar/resource_type/c_18ws"}]},"item_title":"強誘電体の巨大分極を利用した超低損失ダイヤモンドパワーFETの創出","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"強誘電体の巨大分極を利用した超低損失ダイヤモンドパワーFETの創出"},{"subitem_title":"Fabrication of low-loss diamond power FET using giant poralization of ferroelectrics","subitem_title_language":"en"}]},"item_type_id":"9","owner":"18","path":["3929"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-04-22"},"publish_date":"2021-04-22","publish_status":"0","recid":"51569","relation_version_is_last":true,"title":["強誘電体の巨大分極を利用した超低損失ダイヤモンドパワーFETの創出"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-07-27T14:04:02.742275+00:00"}