@article{oai:kanazawa-u.repo.nii.ac.jp:00052710,
 author = {飯山, 宏一 and 丸山, 武男 and Iiyama, Koichi and Maruyama, Takeo and Gyobu, Ryoichi and Hishiki, Takuya and Shimotori, Toshiyuki},
 issue = {7},
 journal = {IEICE Transactions on Electronics},
 month = {},
 note = {Quadrant silicon avalanche photodiodes (APDs) were fabricated by standard 0.18µm CMOS process, and were characterized at 405nm wavelength for Blu-ray applications. The size of each APD element is 50×50µm2. The dark current was 10pA at low bias voltage, and low crosstalk of about -80dB between adjacent APD elements was achieved. Although the responsivity is less than 0.1A/W at low bias voltage, the responsivity is enhanced to more than 1A/W at less than 10V bias voltage due to avalanche amplification. The wide bandwidth of 1.5GHz was achieved with the responsivity of more than 1A/W, which is limited by the capacitance of the APD. We believe that the fabricated quadrant APD is a promising photodiode for multi-layer Blu-ray system., 金沢大学理工研究域フロンティア工学系},
 pages = {574--580},
 title = {High speed and high responsivity avalanche photodiode fabricated by standard CMOS process in blue wavelength region},
 volume = {E101.C},
 year = {2018}
}