@article{oai:kanazawa-u.repo.nii.ac.jp:00058434,
 author = {森本, 章治 and 久米田, 稔 and 清水, 立生 and Masuda, Atsushi and Morimoto, Akiharu and Kumeda, Minoru and Shimizu, Tatsuo and Yonezawa, Yasuto and Minamikawa, Toshiharu},
 issue = {7},
 journal = {Applied Physics Letters},
 month = {},
 note = {A novel oxidation process in hydrogenated amorphous silicon (a-Si:H) using nitrous oxide (N2O) plasma was studied in detail for the first time. The N2O-plasma oxidized a-Si:H has an excellent interface whose interfacial defect density is largely reduced compared with the O 2-plasma oxidized a-Si:H. It was elucidated that this oxide layer has almost stoichiometric composition and contains a small amount of N piling up at the interface between the oxide layer and a-Si:H layer. It also turned out that this process has less ion damage than the O2-plasma oxidation process. The reason for the reduction of the interfacial defect density is attributed to the presence of N at the interface and/or less ion damage in this process., 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系},
 pages = {816--818},
 title = {Novel oxidation process of hydrogenated amorphous silicon utilizing nitrous oxide plasma},
 volume = {61},
 year = {1992}
}