{"created":"2023-07-27T06:59:09.022720+00:00","id":58434,"links":{},"metadata":{"_buckets":{"deposit":"300c339d-65de-416a-954b-2c31421d81ce"},"_deposit":{"created_by":18,"id":"58434","owners":[18],"pid":{"revision_id":0,"type":"depid","value":"58434"},"status":"published"},"_oai":{"id":"oai:kanazawa-u.repo.nii.ac.jp:00058434","sets":["2438:4190:4191"]},"author_link":["9903","9767","132","92098","18597","91155","9766","9902","102091"],"item_4_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1992","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageEnd":"818","bibliographicPageStart":"816","bibliographicVolumeNumber":"61","bibliographic_titles":[{"bibliographic_title":"Applied Physics Letters"}]}]},"item_4_creator_33":{"attribute_name":"著者別表示","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"森本, 章治"}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"久米田, 稔"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"清水, 立生"}],"nameIdentifiers":[{},{}]}]},"item_4_description_21":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A novel oxidation process in hydrogenated amorphous silicon (a-Si:H) using nitrous oxide (N2O) plasma was studied in detail for the first time. The N2O-plasma oxidized a-Si:H has an excellent interface whose interfacial defect density is largely reduced compared with the O 2-plasma oxidized a-Si:H. It was elucidated that this oxide layer has almost stoichiometric composition and contains a small amount of N piling up at the interface between the oxide layer and a-Si:H layer. It also turned out that this process has less ion damage than the O2-plasma oxidation process. The reason for the reduction of the interfacial defect density is attributed to the presence of N at the interface and/or less ion damage in this process.","subitem_description_type":"Abstract"}]},"item_4_description_5":{"attribute_name":"提供者所属","attribute_value_mlt":[{"subitem_description":"金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系","subitem_description_type":"Other"}]},"item_4_identifier_registration":{"attribute_name":"ID登録","attribute_value_mlt":[{"subitem_identifier_reg_text":"10.24517/00064702","subitem_identifier_reg_type":"JaLC"}]},"item_4_publisher_17":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_4_relation_12":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.107754","subitem_relation_type_select":"DOI"}}]},"item_4_relation_28":{"attribute_name":"関連URI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://apl.aip.org/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://apl.aip.org/","subitem_relation_type_select":"URI"}}]},"item_4_rights_23":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"Copyright © American Institute of Physics"}]},"item_4_source_id_11":{"attribute_name":"NCID","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_4_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"},{"subitem_source_identifier":"1077-3118","subitem_source_identifier_type":"ISSN"}]},"item_4_version_type_25":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Masuda, Atsushi"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Morimoto, Akiharu"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Kumeda, Minoru"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Shimizu, Tatsuo"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Yonezawa, Yasuto"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Minamikawa, Toshiharu"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-01-13"}],"displaytype":"detail","filename":"TE-PR-MORIMOTO-A-816.pdf","filesize":[{"value":"654.4 kB"}],"format":"application/pdf","licensetype":"license_11","mimetype":"application/pdf","url":{"label":"TE-PR-MORIMOTO-A-816.pdf","url":"https://kanazawa-u.repo.nii.ac.jp/record/58434/files/TE-PR-MORIMOTO-A-816.pdf"},"version_id":"aa95a8f4-d464-4163-bd21-f80b024cf1ea"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Novel oxidation process of hydrogenated amorphous silicon utilizing nitrous oxide plasma","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Novel oxidation process of hydrogenated amorphous silicon utilizing nitrous oxide plasma"}]},"item_type_id":"4","owner":"18","path":["4191"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-01-13"},"publish_date":"2022-01-13","publish_status":"0","recid":"58434","relation_version_is_last":true,"title":["Novel oxidation process of hydrogenated amorphous silicon utilizing nitrous oxide plasma"],"weko_creator_id":"18","weko_shared_id":-1},"updated":"2023-07-27T10:10:51.319164+00:00"}