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Interface structure of a-Si:H/ZnS multilayer films elucidated from electron-spin resonance and infrared-absorption measurements
https://doi.org/10.24517/00064706
https://doi.org/10.24517/00064706544b1b18-11ee-4552-af49-0eb4a6487088
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
TE-PR-MORIMOTO-A-4739.pdf (1.3 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
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| 公開日 | 2022-01-27 | |||||||||
| タイトル | ||||||||||
| タイトル | Interface structure of a-Si:H/ZnS multilayer films elucidated from electron-spin resonance and infrared-absorption measurements | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| ID登録 | ||||||||||
| ID登録 | 10.24517/00064706 | |||||||||
| ID登録タイプ | JaLC | |||||||||
| 著者 |
Morimoto, Akiharu
× Morimoto, Akiharu× Mizushima, Kazuyoshi× Shimizu, Tatsuo |
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| 著者別表示 |
森本, 章治
× 森本, 章治
× 清水, 立生
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| 提供者所属 | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系 | |||||||||
| 書誌情報 |
Journal of Applied Physics 巻 65, 号 12, p. 4739-4746, 発行日 1989 |
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| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 0021-8979 | |||||||||
| ISSN | ||||||||||
| 収録物識別子タイプ | ISSN | |||||||||
| 収録物識別子 | 1089-7550 | |||||||||
| NCID | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA00693547 | |||||||||
| DOI | ||||||||||
| 関連タイプ | isIdenticalTo | |||||||||
| 識別子タイプ | DOI | |||||||||
| 関連識別子 | 10.1063/1.343226 | |||||||||
| 出版者 | ||||||||||
| 出版者 | American Institute of Physics | |||||||||
| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | Multilayer films consisting of hydrogenated amorphous silicon and zincsulfide (a-Si:H/ZnS) were prepared by glow-discharge decomposition of silane gas and diethylsulfur-diethylzinc gas mixture. Since a-Si:H/ZnS multilayer films do not have Si atoms in their barrier layer, they have an advantage of easy characterization of the a-Si:H well layer by using electron-spin resonance and infrared absorption. These measurements revealed that in an interface region within a distance of 10 nm from the interface, H atoms in a-Si:H are incorporated in the form of dihydride rather than in the form of monohydride. In accordance with the H bonding scheme, it was also found that the interface region in a-Si:H within a distance of several nanometers from the interface has a large Si dangling bond density of the order of 1018 cm-3. Transport properties in these films were also investigated. | |||||||||
| 権利 | ||||||||||
| 権利情報 | Copyright © American Institute of Physics | |||||||||
| 著者版フラグ | ||||||||||
| 出版タイプ | VoR | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||
| 関連URI | ||||||||||
| 識別子タイプ | URI | |||||||||
| 関連識別子 | http://jap.aip.org/ | |||||||||
| 関連名称 | http://jap.aip.org/ | |||||||||
