@article{oai:kanazawa-u.repo.nii.ac.jp:00058441,
 author = {森本, 章治 and 久米田, 稔 and 清水, 立生 and Xu, Xixiang and Okumura, Akihisa and Morimoto, Akiharu and Kumeda, Minoru and Shimizu, Tatsuo},
 issue = {12},
 journal = {Physical Review B},
 month = {},
 note = {Thermally induced metastable defects in hydrogenated amorphous silicon (a-Si:H) and silicon-carbon alloy (a-Si1-xCx:H) films are studied by electron spin resonance (ESR) and conductivity measurements. We found that both undoped and P-doped a-Si1-xCx:H films exhibit thermal-equilibrium phenomena similar to those in a-Si:H although they have much higher defect densities. By heating the samples in situ during ESR measurements, we were able to directly observe the density of dangling bonds in both a-Si:H and a-Si1-xCx:H as the samples move from a frozen-in state into a temperature-dependent equilibrium. The influence of surface states and long-term drift of exposed surface on the thermal-equilibrium process has also been extensively investigated. © 1988 The American Physical Society., 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系},
 pages = {8371--8376},
 title = {Thermally induced metastable defects in hydrogenated amorphous silicon and silicon-carbon alloy films},
 volume = {38},
 year = {1988}
}