@article{oai:kanazawa-u.repo.nii.ac.jp:00058448,
 author = {森本, 章治 and 久米田, 稔 and 清水, 立生 and Kumeda, Minoru and Takahashi, Mitsuo and Morimoto, Akiharu and Shimizu, Tatsuo},
 issue = {A18.1},
 journal = {Materials Research Society Symposium Proceedings},
 month = {},
 note = {The photoluminescence spectra due to Er ions doped in a-Si:H were decomposed into several lines. The 19-K spectrum was reproduced by adding four Gaussian lines whose linewidths were increased with decreasing the photon energy. Since only the lowest energy level of 4I13/2 contributes to the radiative transition at this low temperature, the energy levels in 4I15/2 split by the Stark effect can be determined. These splittings are not largely different from those for Er in aluminosilicate glass. This implies that the all nearest neighbors of Er are oxygens which have been introduced unintentionally in the sample during preparation. The change in the photoluminescence intensity by annealing is discussed in relation with the spectral change and the results of ESR measurements. © 2005 Materials Research Society., 金沢大学設計製造技術研究所 / 金沢大学理工研究域電子情報通信学系},
 pages = {501--506},
 title = {Stark splitting in photoluminescence spectra of Er in a-Si:H},
 volume = {862},
 year = {2005}
}